Near-infrared light-emitting devices from individual heavily Ga-doped ZnO microwires

	Near-infrared light-emitting devices from individual heavily Ga-doped ZnO microwires
	He, G. H.; M. M. Jiang; L. Dong; Z. Z. Zhang; B. H. Li; C. X. Shan and D. Z. Shen
	2017
发表期刊	Journal of Materials Chemistry C
卷号	5 期号:10
摘要	One dimensional (1D) zinc oxide (ZnO) nano and microwires have been considered as one of the most promising candidates for the fabrication of novel nano and microscale electronic and optoelectronic devices. In this study, individual Ga heavily doped ZnO microwires (GZO MWs) were successfully synthesized via chemical vapor deposition methods. Bright, stable, and near-infrared light-emission from electrically biased individual GZO MWs has been achieved. Mysteriously, alternating current driven near-infrared electroluminescence (EL) devices based on individual GZO MWs can also be realized. Therefore, individual GZO MWs that can be analogous to incandescent sources, provide promising potential applications in future ultracompact near-infrared electronic and optoelectronic devices or systems.
收录类别	sci ; ei
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/58934
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	He, G. H.,M. M. Jiang,L. Dong,et al. Near-infrared light-emitting devices from individual heavily Ga-doped ZnO microwires[J]. Journal of Materials Chemistry C,2017,5(10).
APA	He, G. H.,M. M. Jiang,L. Dong,Z. Z. Zhang,B. H. Li,&C. X. Shan and D. Z. Shen.(2017).Near-infrared light-emitting devices from individual heavily Ga-doped ZnO microwires.Journal of Materials Chemistry C,5(10).
MLA	He, G. H.,et al."Near-infrared light-emitting devices from individual heavily Ga-doped ZnO microwires".Journal of Materials Chemistry C 5.10(2017).

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