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Near-infrared light-emitting devices from individual heavily Ga-doped ZnO microwires
He, G. H.; M. M. Jiang; L. Dong; Z. Z. Zhang; B. H. Li; C. X. Shan and D. Z. Shen
2017
发表期刊Journal of Materials Chemistry C
卷号5期号:10
摘要One dimensional (1D) zinc oxide (ZnO) nano and microwires have been considered as one of the most promising candidates for the fabrication of novel nano and microscale electronic and optoelectronic devices. In this study, individual Ga heavily doped ZnO microwires (GZO MWs) were successfully synthesized via chemical vapor deposition methods. Bright, stable, and near-infrared light-emission from electrically biased individual GZO MWs has been achieved. Mysteriously, alternating current driven near-infrared electroluminescence (EL) devices based on individual GZO MWs can also be realized. Therefore, individual GZO MWs that can be analogous to incandescent sources, provide promising potential applications in future ultracompact near-infrared electronic and optoelectronic devices or systems.
收录类别sci ; ei
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/58934
专题中科院长春光机所知识产出
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He, G. H.,M. M. Jiang,L. Dong,et al. Near-infrared light-emitting devices from individual heavily Ga-doped ZnO microwires[J]. Journal of Materials Chemistry C,2017,5(10).
APA He, G. H.,M. M. Jiang,L. Dong,Z. Z. Zhang,B. H. Li,&C. X. Shan and D. Z. Shen.(2017).Near-infrared light-emitting devices from individual heavily Ga-doped ZnO microwires.Journal of Materials Chemistry C,5(10).
MLA He, G. H.,et al."Near-infrared light-emitting devices from individual heavily Ga-doped ZnO microwires".Journal of Materials Chemistry C 5.10(2017).
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