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Highly sensitive extended gate-AlGaN/GaN high electron mobility transistor for bioassay applications
Ding, X. Z.; B. Miao; Z. Q. Gu; B. J. Wu; Y. M. Hu; H. Wang; J. Zhang; D. M. Wu; W. H. Lu and J. D. Li
2017
Source PublicationRsc Advances
Volume7Issue:88
AbstractHerein, an extended gate-AlGaN/GaN high electron mobility transistor (EG-AlGaN/GaN HEMT) with a high sensitivity for bioassay has been developed. The major difference between the EG-AlGaN/GaN HEMT transducer and a traditional AlGaN/GaN HEMT transducer is the sensing region. By extending the gate electrode and separating the sensing region from the channel of the AlGaN/GaN HEMT, our EG-AlGaN/GaN HEMT has a much larger sensing area and therefore achieves a low limit of detection (0.1 pg mL(-1)). Additionally, our transducer exhibits excellent linearity (R-2 = 0.9934) with a wide range (from 0.1 pg mL(-1) to 100 ng mL(-1)). We also demonstrate that the larger area of the extended sensing region can provide a larger current response of the transducer. The results give a proof-of-concept demonstration of the utilization of the EG-AlGaN/GaN HEMT for trace-level biological detection.
Indexed Bysci ; ei
Language英语
Document Type期刊论文
Identifierhttp://ir.ciomp.ac.cn/handle/181722/58880
Collection中科院长春光机所知识产出
Recommended Citation
GB/T 7714
Ding, X. Z.,B. Miao,Z. Q. Gu,et al. Highly sensitive extended gate-AlGaN/GaN high electron mobility transistor for bioassay applications[J]. Rsc Advances,2017,7(88).
APA Ding, X. Z..,B. Miao.,Z. Q. Gu.,B. J. Wu.,Y. M. Hu.,...&W. H. Lu and J. D. Li.(2017).Highly sensitive extended gate-AlGaN/GaN high electron mobility transistor for bioassay applications.Rsc Advances,7(88).
MLA Ding, X. Z.,et al."Highly sensitive extended gate-AlGaN/GaN high electron mobility transistor for bioassay applications".Rsc Advances 7.88(2017).
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