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Dependence of dark current and photoresponse on polarization charges for AlGaN-based heterojunction p-i-n photodetectors
Chen, H. F.; Y. R. Chen; H. Song; Z. M. Li; H. Jiang; D. B. Li; G. Q. Miao; X. J. Sun and Z. W. Zhang
2017
发表期刊Physica Status Solidi a-Applications and Materials Science
卷号214期号:6
摘要The influence of the polarization charges on the properties of AlGaN-based heterojunction p-i-n ultraviolet photodetectors was investigated. It is found that the polarization charges at the hetero-interface can enhance the electric field intensity and result in an increased dark current. On the contrary, the polarization charges can lower the photoresponse because the direction of polarization electric field is opposite to the applied electric field in the light absorption layer.
收录类别sci ; ei
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/58849
专题中科院长春光机所知识产出
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Chen, H. F.,Y. R. Chen,H. Song,et al. Dependence of dark current and photoresponse on polarization charges for AlGaN-based heterojunction p-i-n photodetectors[J]. Physica Status Solidi a-Applications and Materials Science,2017,214(6).
APA Chen, H. F..,Y. R. Chen.,H. Song.,Z. M. Li.,H. Jiang.,...&X. J. Sun and Z. W. Zhang.(2017).Dependence of dark current and photoresponse on polarization charges for AlGaN-based heterojunction p-i-n photodetectors.Physica Status Solidi a-Applications and Materials Science,214(6).
MLA Chen, H. F.,et al."Dependence of dark current and photoresponse on polarization charges for AlGaN-based heterojunction p-i-n photodetectors".Physica Status Solidi a-Applications and Materials Science 214.6(2017).
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