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Dependence of dark current and photoresponse on polarization charges for AlGaN-based heterojunction p-i-n photodetectors
Chen, H. F.; Y. R. Chen; H. Song; Z. M. Li; H. Jiang; D. B. Li; G. Q. Miao; X. J. Sun and Z. W. Zhang
2017
Source PublicationPhysica Status Solidi a-Applications and Materials Science
Volume214Issue:6
AbstractThe influence of the polarization charges on the properties of AlGaN-based heterojunction p-i-n ultraviolet photodetectors was investigated. It is found that the polarization charges at the hetero-interface can enhance the electric field intensity and result in an increased dark current. On the contrary, the polarization charges can lower the photoresponse because the direction of polarization electric field is opposite to the applied electric field in the light absorption layer.
Indexed Bysci ; ei
Language英语
Document Type期刊论文
Identifierhttp://ir.ciomp.ac.cn/handle/181722/58849
Collection中科院长春光机所知识产出
Recommended Citation
GB/T 7714
Chen, H. F.,Y. R. Chen,H. Song,et al. Dependence of dark current and photoresponse on polarization charges for AlGaN-based heterojunction p-i-n photodetectors[J]. Physica Status Solidi a-Applications and Materials Science,2017,214(6).
APA Chen, H. F..,Y. R. Chen.,H. Song.,Z. M. Li.,H. Jiang.,...&X. J. Sun and Z. W. Zhang.(2017).Dependence of dark current and photoresponse on polarization charges for AlGaN-based heterojunction p-i-n photodetectors.Physica Status Solidi a-Applications and Materials Science,214(6).
MLA Chen, H. F.,et al."Dependence of dark current and photoresponse on polarization charges for AlGaN-based heterojunction p-i-n photodetectors".Physica Status Solidi a-Applications and Materials Science 214.6(2017).
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