Dependence of dark current and photoresponse on polarization charges for AlGaN-based heterojunction p-i-n photodetectors

	Dependence of dark current and photoresponse on polarization charges for AlGaN-based heterojunction p-i-n photodetectors
	Chen, H. F.; Y. R. Chen; H. Song; Z. M. Li; H. Jiang; D. B. Li; G. Q. Miao; X. J. Sun and Z. W. Zhang
	2017
发表期刊	Physica Status Solidi a-Applications and Materials Science
卷号	214 期号:6
摘要	The influence of the polarization charges on the properties of AlGaN-based heterojunction p-i-n ultraviolet photodetectors was investigated. It is found that the polarization charges at the hetero-interface can enhance the electric field intensity and result in an increased dark current. On the contrary, the polarization charges can lower the photoresponse because the direction of polarization electric field is opposite to the applied electric field in the light absorption layer.
收录类别	sci ; ei
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/58849
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Chen, H. F.,Y. R. Chen,H. Song,et al. Dependence of dark current and photoresponse on polarization charges for AlGaN-based heterojunction p-i-n photodetectors[J]. Physica Status Solidi a-Applications and Materials Science,2017,214(6).
APA	Chen, H. F..,Y. R. Chen.,H. Song.,Z. M. Li.,H. Jiang.,...&X. J. Sun and Z. W. Zhang.(2017).Dependence of dark current and photoresponse on polarization charges for AlGaN-based heterojunction p-i-n photodetectors.Physica Status Solidi a-Applications and Materials Science,214(6).
MLA	Chen, H. F.,et al."Dependence of dark current and photoresponse on polarization charges for AlGaN-based heterojunction p-i-n photodetectors".Physica Status Solidi a-Applications and Materials Science 214.6(2017).

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