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Thermal Analysis and Design of AlGaInP-based Light Emitting Diode Arrays
Ban, Z.; Z. Z. Liang; J. Q. Liang; W. B. A. Wang; JinguangLv and Y. X. Qin
2017
发表期刊Current Optics and Photonics
卷号1期号:2
摘要LED arrays with pixel numbers of 3x3, 4x4, and 5x5 have been studied in this paper in order to enhance the optical output power and decrease heat dissipation of an AlGaInP-based light emitting diode display device (pixel size of 280x280 mu m) fabricated by micro-opto-electro-mechanical systems. Simulation results showed that the thermal resistances of the 3x3, 4x4, 5x5 arrays were 52 degrees C/W, 69.7 degrees C/W, and 84.3 degrees C/W. The junction temperature was calculated by the peak wavelength shift method, which showed that the maximum value appears at the center pixel due to thermal crosstalk from neighboring pixels. The central temperature would be minimized with 40 mu m pixel pitch and 150 mu m substrate thickness as calculated by thermal modeling using finite element analysis. The modeling can be used to optimize parameters of highly integrated AlGaTnP-based LED arrays fabricated by micro-opto-electro-mechanical systems technology.
收录类别sci ; ei
语种中文
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/58825
专题中科院长春光机所知识产出
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Ban, Z.,Z. Z. Liang,J. Q. Liang,et al. Thermal Analysis and Design of AlGaInP-based Light Emitting Diode Arrays[J]. Current Optics and Photonics,2017,1(2).
APA Ban, Z.,Z. Z. Liang,J. Q. Liang,W. B. A. Wang,&JinguangLv and Y. X. Qin.(2017).Thermal Analysis and Design of AlGaInP-based Light Emitting Diode Arrays.Current Optics and Photonics,1(2).
MLA Ban, Z.,et al."Thermal Analysis and Design of AlGaInP-based Light Emitting Diode Arrays".Current Optics and Photonics 1.2(2017).
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