Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Thermal Analysis and Design of AlGaInP-based Light Emitting Diode Arrays | |
Ban, Z.; Z. Z. Liang; J. Q. Liang; W. B. A. Wang; JinguangLv and Y. X. Qin | |
2017 | |
发表期刊 | Current Optics and Photonics |
卷号 | 1期号:2 |
摘要 | LED arrays with pixel numbers of 3x3, 4x4, and 5x5 have been studied in this paper in order to enhance the optical output power and decrease heat dissipation of an AlGaInP-based light emitting diode display device (pixel size of 280x280 mu m) fabricated by micro-opto-electro-mechanical systems. Simulation results showed that the thermal resistances of the 3x3, 4x4, 5x5 arrays were 52 degrees C/W, 69.7 degrees C/W, and 84.3 degrees C/W. The junction temperature was calculated by the peak wavelength shift method, which showed that the maximum value appears at the center pixel due to thermal crosstalk from neighboring pixels. The central temperature would be minimized with 40 mu m pixel pitch and 150 mu m substrate thickness as calculated by thermal modeling using finite element analysis. The modeling can be used to optimize parameters of highly integrated AlGaTnP-based LED arrays fabricated by micro-opto-electro-mechanical systems technology. |
收录类别 | sci ; ei |
语种 | 中文 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/58825 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Ban, Z.,Z. Z. Liang,J. Q. Liang,et al. Thermal Analysis and Design of AlGaInP-based Light Emitting Diode Arrays[J]. Current Optics and Photonics,2017,1(2). |
APA | Ban, Z.,Z. Z. Liang,J. Q. Liang,W. B. A. Wang,&JinguangLv and Y. X. Qin.(2017).Thermal Analysis and Design of AlGaInP-based Light Emitting Diode Arrays.Current Optics and Photonics,1(2). |
MLA | Ban, Z.,et al."Thermal Analysis and Design of AlGaInP-based Light Emitting Diode Arrays".Current Optics and Photonics 1.2(2017). |
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