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High-power dual-wavelength lasing in bimodal-sized InGaAs/GaAs quantum dots
Zhou, Y. L.; J. Zhang; Y. Q. Ning; Y. G. Zeng; J. W. Zhang; X. Zhang; L. Qin; C. Z. Tong; Y. Liu and L. J. Wang
2016
发表期刊Optics Express
卷号24期号:25
摘要In this paper, we demonstrate high power, dual-wavelength (dual-lambda) lasing stemming from bimodal-sized InGaAs/GaAs quantum dots (QDs). The device exhibits simultaneous dual-lambda lasing at 1015.2 nm and 1023.0 nm with total power of 165.6 mW at 700 mA under room temperature continuous wave (CW) mode. Gaussian fitting analyses of the electroluminescence (EL) spectrum attribute the excellent performance to independent carrier transitions from the first excited states of large dot ensemble (LD ES1) and small dot ensemble (SD ES1), respectively. This formation provides a new possibility to achieve high power dual-lambda operation only using Fabry-Perot (FP) cavity, which is significant for compact size and low fabrication cost. (C) 2016 Optical Society of America
文章类型期刊
收录类别SCI ; EI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/57493
专题中科院长春光机所知识产出
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GB/T 7714
Zhou, Y. L.,J. Zhang,Y. Q. Ning,et al. High-power dual-wavelength lasing in bimodal-sized InGaAs/GaAs quantum dots[J]. Optics Express,2016,24(25).
APA Zhou, Y. L..,J. Zhang.,Y. Q. Ning.,Y. G. Zeng.,J. W. Zhang.,...&Y. Liu and L. J. Wang.(2016).High-power dual-wavelength lasing in bimodal-sized InGaAs/GaAs quantum dots.Optics Express,24(25).
MLA Zhou, Y. L.,et al."High-power dual-wavelength lasing in bimodal-sized InGaAs/GaAs quantum dots".Optics Express 24.25(2016).
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