High-power dual-wavelength lasing in bimodal-sized InGaAs/GaAs quantum dots

	High-power dual-wavelength lasing in bimodal-sized InGaAs/GaAs quantum dots
	Zhou, Y. L.; J. Zhang; Y. Q. Ning; Y. G. Zeng; J. W. Zhang; X. Zhang; L. Qin; C. Z. Tong; Y. Liu and L. J. Wang
	2016
发表期刊	Optics Express
卷号	24 期号:25
摘要	In this paper, we demonstrate high power, dual-wavelength (dual-lambda) lasing stemming from bimodal-sized InGaAs/GaAs quantum dots (QDs). The device exhibits simultaneous dual-lambda lasing at 1015.2 nm and 1023.0 nm with total power of 165.6 mW at 700 mA under room temperature continuous wave (CW) mode. Gaussian fitting analyses of the electroluminescence (EL) spectrum attribute the excellent performance to independent carrier transitions from the first excited states of large dot ensemble (LD ES1) and small dot ensemble (SD ES1), respectively. This formation provides a new possibility to achieve high power dual-lambda operation only using Fabry-Perot (FP) cavity, which is significant for compact size and low fabrication cost. (C) 2016 Optical Society of America
文章类型	期刊
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/57493
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhou, Y. L.,J. Zhang,Y. Q. Ning,et al. High-power dual-wavelength lasing in bimodal-sized InGaAs/GaAs quantum dots[J]. Optics Express,2016,24(25).
APA	Zhou, Y. L..,J. Zhang.,Y. Q. Ning.,Y. G. Zeng.,J. W. Zhang.,...&Y. Liu and L. J. Wang.(2016).High-power dual-wavelength lasing in bimodal-sized InGaAs/GaAs quantum dots.Optics Express,24(25).
MLA	Zhou, Y. L.,et al."High-power dual-wavelength lasing in bimodal-sized InGaAs/GaAs quantum dots".Optics Express 24.25(2016).

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