Measurement of transversal magnification for reduced projection system

	Measurement of transversal magnification for reduced projection system
	Xie, Y.; L.-P. Wang; B.-Y. Guo; J. Wang; L. Miao; H. Wang and F. Zhou
	2016
发表期刊	Guangxue Jingmi Gongcheng/Optics and Precision Engineering
卷号	24 期号:1
摘要	Carrier multiplication is one process for improving the performance of deep ultraviolet (DUV) photodetectors. Conduction band discontinuity can make electrons obtain additional kinetic energy by potential energy (equal to Delta E-C) reducing, and then have sufficient energy to impact a lattice generating electron-hole pairs to increase the internal photocurrent. An active layer consisting of four-period graded bandgap MgZnO with a steep MgxZn1-xO/MgyZn1-yO heterointerface, in which an impact ionization process takes place, has been demonstrated. The fabricated photodetector shows a DUV detection capability with a cutoff wavelength at similar to 280 nm. The peak responsivity at about 250 nm nonlinearly increases with the applied reverse bias.
文章类型	期刊
收录类别	EI
语种	中文
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/57303
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Xie, Y.,L.-P. Wang,B.-Y. Guo,et al. Measurement of transversal magnification for reduced projection system[J]. Guangxue Jingmi Gongcheng/Optics and Precision Engineering,2016,24(1).
APA	Xie, Y.,L.-P. Wang,B.-Y. Guo,J. Wang,L. Miao,&H. Wang and F. Zhou.(2016).Measurement of transversal magnification for reduced projection system.Guangxue Jingmi Gongcheng/Optics and Precision Engineering,24(1).
MLA	Xie, Y.,et al."Measurement of transversal magnification for reduced projection system".Guangxue Jingmi Gongcheng/Optics and Precision Engineering 24.1(2016).

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