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Photoluminescence properties of M2EuxLn1-xAlO5(M=Ca, Sr, Ba, Ln=La, Gd, Lu) red phosphor
Sun, X.-Y.; Y.-X. Wang; J.-G. Qi; L.-J. Yu; Y.-S. Luo; J.-H. Zhang and C.-L. Wu
2016
发表期刊Faguang Xuebao/Chinese Journal of Luminescence
卷号37期号:2
摘要The performance of photoresponsive organic FETs (photOFETs) intimately depends on their optical absorption and charge carrier transport property. We report on red light responsive photOFETs based on various device structures utilizing neodymium phthalocyanine (NdPc2) as the light sensitive material. PhotOFETs based on planar heterojunction, bulk heterojunction (BHJ), and hybrid planar-BHJ (HPBHJ) with NdPc2 and C-60 on poly(vinyl alcohol) (PVA) and SiO2 gate dielectric were fabricated and characterized. Among various device structures, HPBHJ-photOFET on PVA dielectric showed the best performance. For the 650-nm-red light illumination, an ultrahigh photoresponsivity of 108 A/W and a maximum photosensitivity of 3.75 x 10(4) were obtained. The ultrahigh enhancement of the photoresponsivity for HPBHJ-photOFET is resulted from high absorption coefficient of NdPc2 in the red light region, high dissociation efficiency of the photogenerated excitons, and high electron mobility of C-60 layer grown on PVA.
文章类型期刊
收录类别EI
语种中文
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/57195
专题中科院长春光机所知识产出
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Sun, X.-Y.,Y.-X. Wang,J.-G. Qi,et al. Photoluminescence properties of M2EuxLn1-xAlO5(M=Ca, Sr, Ba, Ln=La, Gd, Lu) red phosphor[J]. Faguang Xuebao/Chinese Journal of Luminescence,2016,37(2).
APA Sun, X.-Y.,Y.-X. Wang,J.-G. Qi,L.-J. Yu,Y.-S. Luo,&J.-H. Zhang and C.-L. Wu.(2016).Photoluminescence properties of M2EuxLn1-xAlO5(M=Ca, Sr, Ba, Ln=La, Gd, Lu) red phosphor.Faguang Xuebao/Chinese Journal of Luminescence,37(2).
MLA Sun, X.-Y.,et al."Photoluminescence properties of M2EuxLn1-xAlO5(M=Ca, Sr, Ba, Ln=La, Gd, Lu) red phosphor".Faguang Xuebao/Chinese Journal of Luminescence 37.2(2016).
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