Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Ammonia reduced graphene oxides as a hole injection layer for CdSe/CdS/ZnS quantum dot light-emitting diodes | |
Lou, Q.; W. Y. Ji; J. L. Zhao and C. X. Shan | |
2016 | |
发表期刊 | Nanotechnology
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卷号 | 27期号:32 |
摘要 | Reproducible p-type Ag-S co-doped ZnO (ASZO) films were grown on glass substrate by a modified hydrothermal method, where reaction solution is separated from alkali solution and O-2 is removed from autoclave to avoid deoxidation of Ag+ and oxidation of S-2 in the solution. It is found that the Ag substitutes for the Zn in monovalent state (Ag-Zn(+)) and the S for the O in bivalent state (S-O(2-)) in the ASZO. Both Ag-Zn(+) and S-O(2-) have two doping states, each Ag-Zn(+) is surrounded by 4O(2-) to form Ag-Zn(+) acceptor and each S-O(2-) is surrounded by 4(Zn)(2+), while Ag-Zn(+) bounds with nS(O)(2-) to form Ag-Zn(+)-nS(O)(2-) (n <= 4) complex acceptor. It is demonstrated that Ag doping can suppress the formation of interstitial Zn and O vacancies in the ASZO and S doping can enhance solubility of Ag in the ASZO. Hall measurement indicates that the p-type ASZO film has a hole density as high as 10(18) cm(-3), which is much higher than that of ASZO prepared by magnetron sputtering. The mechanism of the formation of the p-type ASZO with high hole density is suggested in the present paper. (C) 2016 Elsevier B.V. All rights reserved. |
文章类型 | 期刊 |
收录类别 | SCI ; EI |
语种 | 英语 |
WOS记录号 | IOP:0957-4484-27-32-325201 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/57106 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Lou, Q.,W. Y. Ji,J. L. Zhao and C. X. Shan. Ammonia reduced graphene oxides as a hole injection layer for CdSe/CdS/ZnS quantum dot light-emitting diodes[J]. Nanotechnology,2016,27(32). |
APA | Lou, Q.,W. Y. Ji,&J. L. Zhao and C. X. Shan.(2016).Ammonia reduced graphene oxides as a hole injection layer for CdSe/CdS/ZnS quantum dot light-emitting diodes.Nanotechnology,27(32). |
MLA | Lou, Q.,et al."Ammonia reduced graphene oxides as a hole injection layer for CdSe/CdS/ZnS quantum dot light-emitting diodes".Nanotechnology 27.32(2016). |
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