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Ammonia reduced graphene oxides as a hole injection layer for CdSe/CdS/ZnS quantum dot light-emitting diodes
Lou, Q.; W. Y. Ji; J. L. Zhao and C. X. Shan
2016
发表期刊Nanotechnology
卷号27期号:32
摘要Reproducible p-type Ag-S co-doped ZnO (ASZO) films were grown on glass substrate by a modified hydrothermal method, where reaction solution is separated from alkali solution and O-2 is removed from autoclave to avoid deoxidation of Ag+ and oxidation of S-2 in the solution. It is found that the Ag substitutes for the Zn in monovalent state (Ag-Zn(+)) and the S for the O in bivalent state (S-O(2-)) in the ASZO. Both Ag-Zn(+) and S-O(2-) have two doping states, each Ag-Zn(+) is surrounded by 4O(2-) to form Ag-Zn(+) acceptor and each S-O(2-) is surrounded by 4(Zn)(2+), while Ag-Zn(+) bounds with nS(O)(2-) to form Ag-Zn(+)-nS(O)(2-) (n <= 4) complex acceptor. It is demonstrated that Ag doping can suppress the formation of interstitial Zn and O vacancies in the ASZO and S doping can enhance solubility of Ag in the ASZO. Hall measurement indicates that the p-type ASZO film has a hole density as high as 10(18) cm(-3), which is much higher than that of ASZO prepared by magnetron sputtering. The mechanism of the formation of the p-type ASZO with high hole density is suggested in the present paper. (C) 2016 Elsevier B.V. All rights reserved.
文章类型期刊
收录类别SCI ; EI
语种英语
WOS记录号IOP:0957-4484-27-32-325201
引用统计
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/57106
专题中科院长春光机所知识产出
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Lou, Q.,W. Y. Ji,J. L. Zhao and C. X. Shan. Ammonia reduced graphene oxides as a hole injection layer for CdSe/CdS/ZnS quantum dot light-emitting diodes[J]. Nanotechnology,2016,27(32).
APA Lou, Q.,W. Y. Ji,&J. L. Zhao and C. X. Shan.(2016).Ammonia reduced graphene oxides as a hole injection layer for CdSe/CdS/ZnS quantum dot light-emitting diodes.Nanotechnology,27(32).
MLA Lou, Q.,et al."Ammonia reduced graphene oxides as a hole injection layer for CdSe/CdS/ZnS quantum dot light-emitting diodes".Nanotechnology 27.32(2016).
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