The origin of the strong microwave absorption in black TiO2

	The origin of the strong microwave absorption in black TiO2
	Li, K. X.; J. L. Xu; X. D. Yan; L. Liu; X. B. Chen; Y. S. Luo; J. He and D. Z. Shen
	2016
发表期刊	Applied Physics Letters
卷号	108 期号:18
摘要	By converting the energy of nuclear radiation to excited electrons and holes, semiconductor detectors have provided a highly efficient way for detecting them, such as photons or charged particles. However, for detecting the radiated neutrons, those conventional semiconductors hardly behave well, as few of them possess enough capability for capturing these neutral particles. While the element Gd has the highest nuclear cross section, here for searching proper neutron-detecting semiconductors, we investigate theoretically the Gd chalcogenides whose electronic band structures have never been characterized clearly. Among them, we identify that gamma-phase Gd2Se3 should be the best candidate for neutron detecting since it possesses not only the right bandgap of 1.76 eV for devices working under room temperature but also the desired indirect gap nature for charge carriers surviving longer. We propose further that semiconductor neutron detectors with single-neutron sensitivity can be realized with such a Gd-chalcogenide on the condition that their crystals can be grown with good quality.
文章类型	期刊
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/57026
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li, K. X.,J. L. Xu,X. D. Yan,et al. The origin of the strong microwave absorption in black TiO2[J]. Applied Physics Letters,2016,108(18).
APA	Li, K. X..,J. L. Xu.,X. D. Yan.,L. Liu.,X. B. Chen.,...&J. He and D. Z. Shen.(2016).The origin of the strong microwave absorption in black TiO2.Applied Physics Letters,108(18).
MLA	Li, K. X.,et al."The origin of the strong microwave absorption in black TiO2".Applied Physics Letters 108.18(2016).

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