CIOMP OpenIR  > 中科院长春光机所知识产出
GaN-on-Si laser diode: open up a new era of Si-based optical interconnections
Li, D. B.
2016
发表期刊Science Bulletin
卷号61期号:22
摘要ZnO nanorod arrays decorated with NiO nanosheets on FTO substrates were prepared via a simple ultrasonic spray pyrolysis process combined with chemical bath method. The synthesized samples were characterized and analyzed by scanning electron microscopy and X-ray diffraction. The hierarchical and porous morphologies of ZnO/NiO core-shell nanoheterojunctions could be controlled by changing the growth time of NiO sheets. The "oriented attachment" and "self-assembly" crystal growth mechanisms were proposed to explain the formation of the ZnO/NiO nanostructures. Sensors based on the ZnO/NiO heterojunction nanostructure were fabricated and investigated for their ethanol-sensing properties. The result indicated that response was about 180% toward 100 ppm ethanol at an operating temperature of 200 degrees C. The growth approach in this work offers a new technique for the design and synthesis of transition metal oxide hierarchical nanoarrays which are promising for gas sensing applications.
文章类型期刊
收录类别SCI ; EI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/57012
专题中科院长春光机所知识产出
推荐引用方式
GB/T 7714
Li, D. B.. GaN-on-Si laser diode: open up a new era of Si-based optical interconnections[J]. Science Bulletin,2016,61(22).
APA Li, D. B..(2016).GaN-on-Si laser diode: open up a new era of Si-based optical interconnections.Science Bulletin,61(22).
MLA Li, D. B.."GaN-on-Si laser diode: open up a new era of Si-based optical interconnections".Science Bulletin 61.22(2016).
条目包含的文件 下载所有文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
GaN-on-Si laser diod(822KB)期刊论文作者接受稿开放获取CC BY-NC-SA浏览 下载
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Li, D. B.]的文章
百度学术
百度学术中相似的文章
[Li, D. B.]的文章
必应学术
必应学术中相似的文章
[Li, D. B.]的文章
相关权益政策
暂无数据
收藏/分享
文件名: GaN-on-Si laser diode_ open up a new era of Si-based optical interconnections.pdf
格式: Adobe PDF
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。