Single-longitudinal-mode end-emitting laser with 10 periods of metal slots at around 956 nm has been fabricated. 100 Lim wide broad-stripe and ten periods of 9.5 Lim periodicity metal slots are defined by i-line lithography and dry etching. Experimentally, continuous-wave power of 213 mW has achieved, at a slope efficiency of 520 mW/A, having a 3 dB spectrum width of less than 0.04 nm at 900 mA, and operating in a stable single longitudinal mode with the side-mode suppression ratio (SMSR) of 42 dB. We prove that metal slots introduce sufficient loss into the cavity to filter out the wanted mode, and is more efficient on our chip structure than traditional slot laser. This paper provides a new method for the realizing high power broad-stripe (similar to 100 mu m) laser and array with single longitudinal mode operation. (C) 2015 Elsevier B.V. All rights reserved.
Jia, P.,L. Qin,X. Zhang,et al. Reliability Study of Grating Coupled Semiconductor Laser Based on Raman Spectra Technique[J]. Spectroscopy and Spectral Analysis,2016,36(6).
APA
Jia, P.,L. Qin,X. Zhang,J. Zhang,T. Y. Liu,&Z. W. Men and Y. Q. Ning.(2016).Reliability Study of Grating Coupled Semiconductor Laser Based on Raman Spectra Technique.Spectroscopy and Spectral Analysis,36(6).
MLA
Jia, P.,et al."Reliability Study of Grating Coupled Semiconductor Laser Based on Raman Spectra Technique".Spectroscopy and Spectral Analysis 36.6(2016).
; L. Qin; X. Zhang; J. Zhang; T. Y. Liu; Z. W. Men and Y. Q. Ning
修改评论