Analysis of origin of measured 1/f noise in high-power semiconductor laser diodes far below threshold current

	Analysis of origin of measured 1/f noise in high-power semiconductor laser diodes far below threshold current
	Guan, J.; S. X. Guo; J. Y. Wang; M. Tao; J. S. Cao and F. L. Gao
	2016
发表期刊	Microelectronics Reliability
卷号	59
摘要	In this paper the nonlinear stochastic differential equation is used to generalize an intermittency signal,and the correlation of its 1/f noise characteristics under the wavelet bases with different vanishing moments are analyzed.The simulation results show that in the middle band of the frequency spectrum,its power spectrum density (PSD) shows typical 1/f noise characteristics,and the relationship of the signal's wavelet transformation coefficient variance and the corresponding wavelet scale is linear under logarithm coordinate.In this frequency band,under some scales the signal's wavelet transformation coefficient correlations decrease with the vanishing moments growing,while in other scales,the correlations increase with the vanishing moment increasement.These results indicate that wavelet transformation does not always bring decorrelation to the intermittency signal.The relationship of the wavelet transformation coefficients' variances and the scale,and the tendency of coefficients' correlations with wavelet vanishing moments changing are analyzed. 2016, Chinese Institute of Electronics. All right reserved.
文章类型	期刊
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/56936
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Guan, J.,S. X. Guo,J. Y. Wang,et al. Analysis of origin of measured 1/f noise in high-power semiconductor laser diodes far below threshold current[J]. Microelectronics Reliability,2016,59.
APA	Guan, J.,S. X. Guo,J. Y. Wang,M. Tao,&J. S. Cao and F. L. Gao.(2016).Analysis of origin of measured 1/f noise in high-power semiconductor laser diodes far below threshold current.Microelectronics Reliability,59.
MLA	Guan, J.,et al."Analysis of origin of measured 1/f noise in high-power semiconductor laser diodes far below threshold current".Microelectronics Reliability 59(2016).

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