Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition | |
Chen, F.![]() | |
2016 | |
发表期刊 | Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering
![]() |
卷号 | 45期号:4 |
摘要 | The influence of growth temperature on the properties of aluminum nitride (AlN) films are grown by plasma enhanced atomic layer deposition (PEALD) at different deposition temperature. NH3 and trimethylaluminum (TMA) were used as precursors, 200, 500, 800, 1000, 1500 cycles AlN layers were deposited at 300, 350 and 370, the growth rate, crystallinity and surface roughness were discussed. Deposition rate and crystallization of the films increased whereas the surface roughness decreased in the growth temperature range of 300-370. 2016, Editorial Board of Journal of Infrared and Laser Engineering. All right reserved. |
文章类型 | 期刊 |
收录类别 | EI |
语种 | 中文 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/56861 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Chen, F.,X. Fang,S. Wang,et al. Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition[J]. Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering,2016,45(4). |
APA | Chen, F..,X. Fang.,S. Wang.,S. Niu.,F. Fang.,...&G. Liu and Z. Wei.(2016).Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition.Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering,45(4). |
MLA | Chen, F.,et al."Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition".Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering 45.4(2016). |
条目包含的文件 | 下载所有文件 | |||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
Effect of deposition(1145KB) | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | 浏览 下载 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论