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	Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition
	Chen, F.; X. Fang; S. Wang; S. Niu; F. Fang; D. Fang; J. Tang; X. Wang; G. Liu and Z. Wei
	2016
发表期刊	Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering
卷号	45期号:4
摘要	The influence of growth temperature on the properties of aluminum nitride (AlN) films are grown by plasma enhanced atomic layer deposition (PEALD) at different deposition temperature. NH3 and trimethylaluminum (TMA) were used as precursors, 200, 500, 800, 1000, 1500 cycles AlN layers were deposited at 300, 350 and 370, the growth rate, crystallinity and surface roughness were discussed. Deposition rate and crystallization of the films increased whereas the surface roughness decreased in the growth temperature range of 300-370. 2016, Editorial Board of Journal of Infrared and Laser Engineering. All right reserved.
文章类型	期刊
收录类别	EI
语种	中文
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/56861
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Chen, F.,X. Fang,S. Wang,et al. Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition[J]. Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering,2016,45(4).
APA	Chen, F..,X. Fang.,S. Wang.,S. Niu.,F. Fang.,...&G. Liu and Z. Wei.(2016).Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition.Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering,45(4).
MLA	Chen, F.,et al."Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition".Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering 45.4(2016).

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