Changchun Institute of Optics,Fine Mechanics and Physics,CAS
| Development of high power diode laser | |
| Wang, L.-J.; Y.-Q. Ning; L. Qin; C.-Z. Tong and Y.-Y. Chen | |
| 2015 | |
| 发表期刊 | Faguang Xuebao/Chinese Journal of Luminescence
 |
| 卷号 | 36期号:1页码:42388 |
| 摘要 | This paper reviews on the history and the development status for semiconductor lasers, meanwhile focuses on the high power semiconductor laser achievements acquired by Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP) in recent years, especially at the aspects of high power semiconductor laser sources, vertical cavity surface emitting lasers (VCSEL) and novel laser chips. |
| 文章类型 | 期刊论文 |
| 收录类别 | EI |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.ciomp.ac.cn/handle/181722/55989 |
| 专题 | 中科院长春光机所知识产出 |
| 推荐引用方式 GB/T 7714 | Wang, L.-J.,Y.-Q. Ning,L. Qin,et al. Development of high power diode laser[J]. Faguang Xuebao/Chinese Journal of Luminescence,2015,36(1):42388. |
| APA | Wang, L.-J.,Y.-Q. Ning,L. Qin,&C.-Z. Tong and Y.-Y. Chen.(2015).Development of high power diode laser.Faguang Xuebao/Chinese Journal of Luminescence,36(1),42388. |
| MLA | Wang, L.-J.,et al."Development of high power diode laser".Faguang Xuebao/Chinese Journal of Luminescence 36.1(2015):42388. |
| 条目包含的文件 | 下载所有文件 | |||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
| 大功率半导体激光器研究进展.caj（1061KB） | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | 浏览 下载 | |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论