Properties of InGaAs deposited on GaAs substrate with two-step growth

	Properties of InGaAs deposited on GaAs substrate with two-step growth
	Han, Z.-M.; G.-Q. Miao; Y.-G. Zeng and Z.-W. Zhang
	2015
发表期刊	Faguang Xuebao/Chinese Journal of Luminescence
卷号	36 期号:3 页码:288-292
摘要	InxGa1-xAs was deposited on (100) GaAs substrate by MOCVD with the two-step growth. The effects of buffer layer thickness on the surface morphology, crystalline quality, and alloy order degree of the epilayer were analyzed by SEM, AFM, XRD, and Raman spectroscopy, respectively. The distribution of dislocations in epilayer was observed by TEM and the dislocation density was calculated. The experiment results show that the buffer layer thickness of InxGa1-xAs heterostructure has the optimal value. , 2015, Chines Academy of Sciences. All right reserved.
文章类型	期刊论文
收录类别	EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/55974
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Han, Z.-M.,G.-Q. Miao,Y.-G. Zeng and Z.-W. Zhang. Properties of InGaAs deposited on GaAs substrate with two-step growth[J]. Faguang Xuebao/Chinese Journal of Luminescence,2015,36(3):288-292.
APA	Han, Z.-M.,G.-Q. Miao,&Y.-G. Zeng and Z.-W. Zhang.(2015).Properties of InGaAs deposited on GaAs substrate with two-step growth.Faguang Xuebao/Chinese Journal of Luminescence,36(3),288-292.
MLA	Han, Z.-M.,et al."Properties of InGaAs deposited on GaAs substrate with two-step growth".Faguang Xuebao/Chinese Journal of Luminescence 36.3(2015):288-292.

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两步生长法生长的In_xGa_(1-x)（455KB）	期刊论文	作者接受稿	开放获取	CC BY-NC-SA	浏览下载