Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Stacking-Dependent Interlayer Coupling in Trilayer Mo52 with Broken Inversion Symmetry | |
Yan, J. X.; J. Xia; X. L. Wang; L. Liu; J. L. Kuo; B. K. Tay; S. S. Chen; W. Zhou; Z. Liu and Z. X. Shen | |
2015 | |
发表期刊 | Nano Letters
![]() |
卷号 | 15期号:12页码:8155-8161 |
摘要 | The stacking configuration in few-layer two-dimensional (2D) materials results in different structural symmetries and layer-to-layer interactions, and hence it provides a very useful parameter for tuning their electronic properties. For example, ABA-stacking trilayer graphene remains semimetallic similar to that of monolayer, while ABC-stacking is predicted to be a tunable band gap semiconductor under an external electric field. Such stacking dependence resulting from many-body interactions has recently been the focus of intense research activities. Here we demonstrate that few-layer MoS2 samples grown by chemical vapor deposition with different stacking configurations (AA, AB for bilayer; AAB, ABB, ABA, AAA for trilayer) exhibit distinct coupling phenomena in both photoluminescence and Raman spectra. By means of ultralow-frequency (ULF) Raman spectroscopy, we demonstrate that the evolution of interlayer interaction with various stacking configurations correlates strongly with layer-breathing mode (LBM) vibrations. Our ab initio calculations reveal that the layer-dependent properties arise from both the spin orbit coupling (SOC) and interlayer coupling in different structural symmetries. Such detailed understanding provides useful guidance for future spintronics fabrication using various stacked few-layer MoS2 blocks. |
收录类别 | SCI |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/55493 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Yan, J. X.,J. Xia,X. L. Wang,et al. Stacking-Dependent Interlayer Coupling in Trilayer Mo52 with Broken Inversion Symmetry[J]. Nano Letters,2015,15(12):8155-8161. |
APA | Yan, J. X..,J. Xia.,X. L. Wang.,L. Liu.,J. L. Kuo.,...&Z. Liu and Z. X. Shen.(2015).Stacking-Dependent Interlayer Coupling in Trilayer Mo52 with Broken Inversion Symmetry.Nano Letters,15(12),8155-8161. |
MLA | Yan, J. X.,et al."Stacking-Dependent Interlayer Coupling in Trilayer Mo52 with Broken Inversion Symmetry".Nano Letters 15.12(2015):8155-8161. |
条目包含的文件 | 下载所有文件 | |||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
Yan-2015-Stacking-De(458KB) | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | 浏览 下载 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论