Optimized growth of graphene on SiC: from the dynamic flip mechanism

	Optimized growth of graphene on SiC: from the dynamic flip mechanism
	Wang, D. D.; L. Liu; W. Chen; X. B. Chen; H. Huang; J. He; Y. P. Feng; A. T. S. Wee and D. Z. Shen
	2015
发表期刊	Nanoscale
卷号	7 期号:10 页码:4522-4528
摘要	Thermal decomposition of single-crystal SiC is one of the popular methods for growing graphene. However, the mechanism of graphene formation on the SiC surface is poorly understood, and the application of this method is also hampered by its high growth temperature. In this study, based on the ab initio calculations, we propose a vacancy assisted Si-C bond flipping model for the dynamic process of graphene growth on SiC. The fact that the critical stages during growth take place at different energy costs allows us to propose an energetic-beam controlled growth method that not only significantly lowers the growth temperature but also makes it possible to grow high-quality graphene with the desired size and patterns directly on the SiC substrate.
收录类别	SCI ; EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/55463
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang, D. D.,L. Liu,W. Chen,et al. Optimized growth of graphene on SiC: from the dynamic flip mechanism[J]. Nanoscale,2015,7(10):4522-4528.
APA	Wang, D. D..,L. Liu.,W. Chen.,X. B. Chen.,H. Huang.,...&A. T. S. Wee and D. Z. Shen.(2015).Optimized growth of graphene on SiC: from the dynamic flip mechanism.Nanoscale,7(10),4522-4528.
MLA	Wang, D. D.,et al."Optimized growth of graphene on SiC: from the dynamic flip mechanism".Nanoscale 7.10(2015):4522-4528.

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