Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Interfacial Emission Adjustment in ZnO Quantum Dots/p-GaN Heterojunction Light-Emitting Diodes | |
Wang, D. K.; F. Wang; Y. P. Wang; Y. Fan; B. Zhao and D. X. Zhao | |
2015 | |
发表期刊 | Journal of Physical Chemistry C |
卷号 | 119期号:5页码:2798-2803 |
摘要 | Ultraviolet (UV) light-emitting diodes (LEDs) were made by using ZnO quantum dots (QDs) as the emission layer. ZnO QDs with the diameter of 5 nm were fabricated by using a simple sintering method. By using p-GaN as the hole injection layer, a ZnO QDs/p-GaN heterojunction LED was constructed. Trap-controlled SCLC behavior of QDs led the LED to emit light mainly from the QDs layer, and the direct physical contact between ZnO QDs and GaN could effectively reduce the interfacial emission. As the result, a UV LED with the electroluminescence wavelength of 382 nm has been achieved. |
收录类别 | SCI ; EI |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/55459 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Wang, D. K.,F. Wang,Y. P. Wang,et al. Interfacial Emission Adjustment in ZnO Quantum Dots/p-GaN Heterojunction Light-Emitting Diodes[J]. Journal of Physical Chemistry C,2015,119(5):2798-2803. |
APA | Wang, D. K.,F. Wang,Y. P. Wang,Y. Fan,&B. Zhao and D. X. Zhao.(2015).Interfacial Emission Adjustment in ZnO Quantum Dots/p-GaN Heterojunction Light-Emitting Diodes.Journal of Physical Chemistry C,119(5),2798-2803. |
MLA | Wang, D. K.,et al."Interfacial Emission Adjustment in ZnO Quantum Dots/p-GaN Heterojunction Light-Emitting Diodes".Journal of Physical Chemistry C 119.5(2015):2798-2803. |
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