Interfacial Emission Adjustment in ZnO Quantum Dots/p-GaN Heterojunction Light-Emitting Diodes

	Interfacial Emission Adjustment in ZnO Quantum Dots/p-GaN Heterojunction Light-Emitting Diodes
	Wang, D. K.; F. Wang; Y. P. Wang; Y. Fan; B. Zhao and D. X. Zhao
	2015
发表期刊	Journal of Physical Chemistry C
卷号	119 期号:5 页码:2798-2803
摘要	Ultraviolet (UV) light-emitting diodes (LEDs) were made by using ZnO quantum dots (QDs) as the emission layer. ZnO QDs with the diameter of 5 nm were fabricated by using a simple sintering method. By using p-GaN as the hole injection layer, a ZnO QDs/p-GaN heterojunction LED was constructed. Trap-controlled SCLC behavior of QDs led the LED to emit light mainly from the QDs layer, and the direct physical contact between ZnO QDs and GaN could effectively reduce the interfacial emission. As the result, a UV LED with the electroluminescence wavelength of 382 nm has been achieved.
收录类别	SCI ; EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/55459
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang, D. K.,F. Wang,Y. P. Wang,et al. Interfacial Emission Adjustment in ZnO Quantum Dots/p-GaN Heterojunction Light-Emitting Diodes[J]. Journal of Physical Chemistry C,2015,119(5):2798-2803.
APA	Wang, D. K.,F. Wang,Y. P. Wang,Y. Fan,&B. Zhao and D. X. Zhao.(2015).Interfacial Emission Adjustment in ZnO Quantum Dots/p-GaN Heterojunction Light-Emitting Diodes.Journal of Physical Chemistry C,119(5),2798-2803.
MLA	Wang, D. K.,et al."Interfacial Emission Adjustment in ZnO Quantum Dots/p-GaN Heterojunction Light-Emitting Diodes".Journal of Physical Chemistry C 119.5(2015):2798-2803.

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