Changchun Institute of Optics,Fine Mechanics and Physics,CAS
High brightness turquoise light-emitting diodes based on ZnO microwires | |
Wang, D. K.; F. Wang; B. Zhao; Y. P. Wang and D. X. Zhao | |
2015 | |
发表期刊 | RSC Advances
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卷号 | 5期号:109页码:89895-89899 |
摘要 | ZnO microwire clusters have been fabricated by a chemical vapor deposition method on copper foil. Bright green luminescence was obtained when the sample was excited by an ultraviolet lamp. The mechanism of green luminescence and the relationship of point defect with emission were analyzed in detail. The quantum yield of green emission is 31%. Light emitting diodes were prepared based on ZnO microwires with a p-GaN or n-GaN film heterojunction. High brightness turquoise emission was obtained and the mechanism is discussed in this paper. |
收录类别 | SCI ; EI |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/55457 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Wang, D. K.,F. Wang,B. Zhao,et al. High brightness turquoise light-emitting diodes based on ZnO microwires[J]. RSC Advances,2015,5(109):89895-89899. |
APA | Wang, D. K.,F. Wang,B. Zhao,&Y. P. Wang and D. X. Zhao.(2015).High brightness turquoise light-emitting diodes based on ZnO microwires.RSC Advances,5(109),89895-89899. |
MLA | Wang, D. K.,et al."High brightness turquoise light-emitting diodes based on ZnO microwires".RSC Advances 5.109(2015):89895-89899. |
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