Evolution in the Electronic Structure of Polymer-derived Amorphous Silicon Carbide

	Evolution in the Electronic Structure of Polymer-derived Amorphous Silicon Carbide
	Wang, K. W.; X. Q. Li; B. S. Ma; M. Zhang; J. L. Liu; Y. G. Wang; L. G. Zhang and L. N. An
	2015
发表期刊	Journal of the American Ceramic Society
卷号	98 期号:7 页码:2153-2158
摘要	The electronic structure of polymer-derived amorphous silicon carbide pyrolyzed at different temperatures was investigated by combining measurements of their temperature-dependent conductivity and optical absorption. By comparing the experimental results with theoretical models, the parameters such as conduction band, band-tail, defect energy, and Fermi energy were determined. The results revealed that band gap and band-tail width decreased with increasing pyrolysis temperature. Furthermore, it was found that electrons transport followed a band-tail hopping mechanism, rather than variable range hopping. These results were discussed in accordance with the microstructural evolutions of the material.
收录类别	SCI ; EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/55454
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang, K. W.,X. Q. Li,B. S. Ma,et al. Evolution in the Electronic Structure of Polymer-derived Amorphous Silicon Carbide[J]. Journal of the American Ceramic Society,2015,98(7):2153-2158.
APA	Wang, K. W..,X. Q. Li.,B. S. Ma.,M. Zhang.,J. L. Liu.,...&L. G. Zhang and L. N. An.(2015).Evolution in the Electronic Structure of Polymer-derived Amorphous Silicon Carbide.Journal of the American Ceramic Society,98(7),2153-2158.
MLA	Wang, K. W.,et al."Evolution in the Electronic Structure of Polymer-derived Amorphous Silicon Carbide".Journal of the American Ceramic Society 98.7(2015):2153-2158.

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