Ultraviolet Lasers Realized via Electrostatic Doping Method

	Ultraviolet Lasers Realized via Electrostatic Doping Method
	Liu, X. Y.; C. X. Shan; H. Zhu; B. H. Li; M. M. Jiang; S. F. Yu and D. Z. Shen
	2015
发表期刊	Scientific Reports
卷号	5 页码:9
摘要	P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically. Here we show that by employing electrostatic doping method, hole-dominant region can be formed in wide bandgap semiconductors, and UV lasing has been achieved through the external injection of electrons into the hole-dominant region, confirming the applicability of the p-type wide bandgap semiconductors realized via the electrostatic doping method in optoelectronic devices.
收录类别	SCI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/55442
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liu, X. Y.,C. X. Shan,H. Zhu,et al. Ultraviolet Lasers Realized via Electrostatic Doping Method[J]. Scientific Reports,2015,5:9.
APA	Liu, X. Y.,C. X. Shan,H. Zhu,B. H. Li,M. M. Jiang,&S. F. Yu and D. Z. Shen.(2015).Ultraviolet Lasers Realized via Electrostatic Doping Method.Scientific Reports,5,9.
MLA	Liu, X. Y.,et al."Ultraviolet Lasers Realized via Electrostatic Doping Method".Scientific Reports 5(2015):9.