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Ultra-low threshold avalanche gain from solar-blind photodetector based on graded-band-gap-cubic-MgZnO
Xie, X. H.; Z. Z. Zhang; B. H. Li; S. P. Wang and D. Z. Shen
2015
发表期刊Optics Express
卷号23期号:25页码:32329-32336
摘要A larger ratio of conduction-band offset to valence-band offset is the unique character for MgxZn1-xO alloys. For this reason, it is feasible to build a quasi-electric forces, caused by the spatial gradient of the conduction edge, exerting on the electrons. In this paper, a novel graded band gap cubic-MgZnO-based solar-blind photodetector is successfully fabricated from Graded-Band-Gap-Cubic-MgZnO/i-MgO/p-Si heterojunction, via changing stoichiometry spatial gradient. Due to quasi-electric fields in non-uniform MgZnO, the multiple carriers are generated under ultra-low threshold bias voltage. The photodetector showed high performance, namely, high responsivity, quantum efficiency, high sensitivity and selectivity towards the solar-blind spectrum, and fast response times. (C) 2015 Optical Society of America
收录类别SCI ; EI
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/55441
专题中科院长春光机所知识产出
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Xie, X. H.,Z. Z. Zhang,B. H. Li,et al. Ultra-low threshold avalanche gain from solar-blind photodetector based on graded-band-gap-cubic-MgZnO[J]. Optics Express,2015,23(25):32329-32336.
APA Xie, X. H.,Z. Z. Zhang,B. H. Li,&S. P. Wang and D. Z. Shen.(2015).Ultra-low threshold avalanche gain from solar-blind photodetector based on graded-band-gap-cubic-MgZnO.Optics Express,23(25),32329-32336.
MLA Xie, X. H.,et al."Ultra-low threshold avalanche gain from solar-blind photodetector based on graded-band-gap-cubic-MgZnO".Optics Express 23.25(2015):32329-32336.
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