Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Hole transporting material-free and annealing-free thermal evaporated planar perovskite solar cells with an ultra-thin CH3NH3PbI3-XClX layer | |
Su, Z. S.; F. H. Hou; F. M. Jin; L. D. Wang; Y. T. Li; J. Z. Zhu; B. Chu and W. L. Li | |
2015 | |
发表期刊 | Organic Electronics |
卷号 | 26页码:104-108 |
摘要 | High efficiency and stable hole transporting material-free (HTM-free) planar heterojunction (PHJ) perovskite solar cells are constructed by directly thermal evaporating perovskite materials onto indium tin oxide substrate. A condense and homogeneous morphology is found for this perovskite film even without any annealing process. The optimized HTM-free CH3NH3PbI3-XClX/C-60 PHJ device with a 35 nm ultra-thin CH3NH3PbI3-XClX layer presents a high hole extraction efficiency and a low charge carrier recombination probability, which results in a high short circuit current and fill factor. The HTM-free device shows a high power conversion efficiency of 8.37%, which is one of the highest efficiency among reported inverted HTM-free perovskite solar cells even that a thinner perovskite film is used. More importantly, the device also exhibits a superior stability in ambient conditions. (C) 2015 Elsevier B.V. All rights reserved. |
收录类别 | SCI |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/55408 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Su, Z. S.,F. H. Hou,F. M. Jin,et al. Hole transporting material-free and annealing-free thermal evaporated planar perovskite solar cells with an ultra-thin CH3NH3PbI3-XClX layer[J]. Organic Electronics,2015,26:104-108. |
APA | Su, Z. S..,F. H. Hou.,F. M. Jin.,L. D. Wang.,Y. T. Li.,...&B. Chu and W. L. Li.(2015).Hole transporting material-free and annealing-free thermal evaporated planar perovskite solar cells with an ultra-thin CH3NH3PbI3-XClX layer.Organic Electronics,26,104-108. |
MLA | Su, Z. S.,et al."Hole transporting material-free and annealing-free thermal evaporated planar perovskite solar cells with an ultra-thin CH3NH3PbI3-XClX layer".Organic Electronics 26(2015):104-108. |
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