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Pixeled Electroluminescence from Multi layer Heterostructure Organic Light-Emitting Transistors
Song, L.; Y. S. Hu; D. W. Li; H. Chen and X. Y. Liu
2015
发表期刊Journal of Physical Chemistry C
卷号119期号:35页码:20237-20243
摘要Improved performance of multilayer heterostructure organic light-emitting transistors (OLETs) was observed in brightness and external quantum efficiency (EQE) by inserting an ultrathin MoOx layer and TPBI buffer layer. With in-plane emission mainly beneath the drain electrode with a maximum width of 120 mu m, an EQE of 0.16% at a brightness of 238 cd/m(2) was obtained. Different sizes of pixeled OLETs were fabricated by restricting the pixel length by narrowing the width of the gate electrode perpendicular to the source/drain electrodes. Light emission pixels with sizes from 25 to 400 mu m have been successfully demonstrated. The maximum width of the emission zone was not affected, and the maximum EQE and the corresponding brightness presented an increasing tendency for pixeled OLETs. The results in our work are helpful for developing a new generation of OLET-based display technology.
收录类别SCI ; EI
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/55404
专题中科院长春光机所知识产出
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GB/T 7714
Song, L.,Y. S. Hu,D. W. Li,et al. Pixeled Electroluminescence from Multi layer Heterostructure Organic Light-Emitting Transistors[J]. Journal of Physical Chemistry C,2015,119(35):20237-20243.
APA Song, L.,Y. S. Hu,D. W. Li,&H. Chen and X. Y. Liu.(2015).Pixeled Electroluminescence from Multi layer Heterostructure Organic Light-Emitting Transistors.Journal of Physical Chemistry C,119(35),20237-20243.
MLA Song, L.,et al."Pixeled Electroluminescence from Multi layer Heterostructure Organic Light-Emitting Transistors".Journal of Physical Chemistry C 119.35(2015):20237-20243.
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