p-type doping of MgZnO films and their applications in optoelectronic devices

	p-type doping of MgZnO films and their applications in optoelectronic devices
	Shan, C. X.; J. S. Liu; Y. J. Lu; B. H. Li; F. C. C. Ling and D. Z. Shen
	2015
发表期刊	Optics Letters
卷号	40 期号:13 页码:3041-3044
摘要	A lithium and nitrogen codoping method has been employed to prepare p-type MgZnO films, and p-MgZnO/i-ZnO/n-ZnO structured light-emitting devices (LEDs) and photodetectors have been fabricated. The LEDs can work continuously for about 97 h under the injection of a 20 mA continuous current, which is the best value ever reported for ZnO-based LEDs. The performance of the photodetectors degrades little after several running cycles. The above results reveal the applicability of the p-MgZnO films in optoelectronic devices. (C) 2015 Optical Society of America
收录类别	SCI ; EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/55380
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Shan, C. X.,J. S. Liu,Y. J. Lu,et al. p-type doping of MgZnO films and their applications in optoelectronic devices[J]. Optics Letters,2015,40(13):3041-3044.
APA	Shan, C. X.,J. S. Liu,Y. J. Lu,B. H. Li,&F. C. C. Ling and D. Z. Shen.(2015).p-type doping of MgZnO films and their applications in optoelectronic devices.Optics Letters,40(13),3041-3044.
MLA	Shan, C. X.,et al."p-type doping of MgZnO films and their applications in optoelectronic devices".Optics Letters 40.13(2015):3041-3044.