Photoluminescence Properties of the GaSb Nanostructures Irradiated by Femtosecond Laser

	Photoluminescence Properties of the GaSb Nanostructures Irradiated by Femtosecond Laser
	Fang, D.; X. Fang; Y. F. Li; B. Yao; H. F. Zhao; Z. P. Wei; J. L. Tang; C. Du; J. H. Li; X. H. Ma; D. D. Wang and Y. S. Yan
	2015
发表期刊	Nanoscience and Nanotechnology Letters
卷号	7 期号:2 页码:117-120
摘要	We have systematically investigated photoluminescence properties of surface microstructure of Te-doped n-type gallium antimonide (GaSb) irradiated by femtosecond laser, observe the surface topography with SEM (scanning electron microscope). Following the previous work, choose the optimal condition for passivation. Then passivated the sample with ammonium sulfide ((NH4)(2)S) for analyse Photoluminescence Characterisation easily. Compare with the unlaser treatment sample, laser irradiated sample's main luminous peak is slightly blue shift about 14 meV in 300 K. It can be attribute to the change in the source of the emission peak. The laser-induced sample show a new strong peak appeared at 781 meV in 150 K. We assume this enhanced peak is a response of surface micro-structure.
收录类别	SCI ; EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/55375
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Fang, D.,X. Fang,Y. F. Li,et al. Photoluminescence Properties of the GaSb Nanostructures Irradiated by Femtosecond Laser[J]. Nanoscience and Nanotechnology Letters,2015,7(2):117-120.
APA	Fang, D..,X. Fang.,Y. F. Li.,B. Yao.,H. F. Zhao.,...&D. D. Wang and Y. S. Yan.(2015).Photoluminescence Properties of the GaSb Nanostructures Irradiated by Femtosecond Laser.Nanoscience and Nanotechnology Letters,7(2),117-120.
MLA	Fang, D.,et al."Photoluminescence Properties of the GaSb Nanostructures Irradiated by Femtosecond Laser".Nanoscience and Nanotechnology Letters 7.2(2015):117-120.

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