Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Mechanism of effect of intrinsic defects on electrical and optical properties of Cu2CdSnS4: an experimental and first-principles study | |
Meng, L.; Y. Li; B. Yao; Z. H. Ding; G. Yang; R. J. Liu; R. Deng and L. Liu | |
2015 | |
发表期刊 | Journal of Physics D-Applied Physics
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卷号 | 48期号:44页码:7 |
摘要 | Near stoichiometric and Cd-poor Cu2CdSnS4 (CCTS) thin films with p-type conductivity were prepared by magnetron sputtering and post-sulfurizing. It is found that the hole concentration of the Cd-poor CCTS is two orders of magnitude higher than that of the near stoichiometric CCTS while its optical bandgap is smaller than the near stoichiometric CCTS'. It is suggested by using first-principles calculations that the dominant intrinsic defects are Cu vacancy (V-Cu) and fully passivated defect complex of 2Cu(Cd)+SnCd in the Cd-poor CCTS, but V-Cu and CuCd in the near stoichiometric CCTS. The V-Cu is responsible for the p-type conductivity of both CCTS films, while the 2Cu(Cd)+SnCd complex for smaller bandgap and higher hole concentration of the Cd-poor CCTS. The mechanism of effect of the intrinsic defects on the optical and electrical properties of the CCTS is suggested in the present paper. |
收录类别 | SCI ; EI |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/55350 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Meng, L.,Y. Li,B. Yao,et al. Mechanism of effect of intrinsic defects on electrical and optical properties of Cu2CdSnS4: an experimental and first-principles study[J]. Journal of Physics D-Applied Physics,2015,48(44):7. |
APA | Meng, L..,Y. Li.,B. Yao.,Z. H. Ding.,G. Yang.,...&R. Deng and L. Liu.(2015).Mechanism of effect of intrinsic defects on electrical and optical properties of Cu2CdSnS4: an experimental and first-principles study.Journal of Physics D-Applied Physics,48(44),7. |
MLA | Meng, L.,et al."Mechanism of effect of intrinsic defects on electrical and optical properties of Cu2CdSnS4: an experimental and first-principles study".Journal of Physics D-Applied Physics 48.44(2015):7. |
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