Design and performance analysis of extended wavelength InGaAs near-infrared photodetectors

	Design and performance analysis of extended wavelength InGaAs near-infrared photodetectors
	Ma, J.; Z. W. Zhang; G. Q. Miao and Y. G. Zhao
	2015
发表期刊	Japanese Journal of Applied Physics
卷号	54 期号:10 页码:6
摘要	In this work, we investigate the performance of InGaAs p-i-n photodetectors with cut-off wavelengths near 2.5 mu m. The influences of different cap materials on the optoelectronic properties of InGaAs detector are also compared and discussed. The result indicates that the InAlAs used as cap layer can lead to lower dark current and larger quantum efficiency than other cap layers. In addition, our results show that the device performance is influenced by the valence band offset. This work proves that InAlAs/InGaAs/InP structure is a promising candidate for high performance detector with optimally tuned band gap. Furthermore, dark current mechanisms for extended wavelength InGaAs detectors are analyzed in-depth. (c) 2015 The Japan Society of Applied Physics
收录类别	SCI ; EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/55347
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Ma, J.,Z. W. Zhang,G. Q. Miao and Y. G. Zhao. Design and performance analysis of extended wavelength InGaAs near-infrared photodetectors[J]. Japanese Journal of Applied Physics,2015,54(10):6.
APA	Ma, J.,Z. W. Zhang,&G. Q. Miao and Y. G. Zhao.(2015).Design and performance analysis of extended wavelength InGaAs near-infrared photodetectors.Japanese Journal of Applied Physics,54(10),6.
MLA	Ma, J.,et al."Design and performance analysis of extended wavelength InGaAs near-infrared photodetectors".Japanese Journal of Applied Physics 54.10(2015):6.

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