Photoluminescence of indium-rich copper indium sulfide quantum dots

	Photoluminescence of indium-rich copper indium sulfide quantum dots
	Liu, W. Y.; Y. Zhang; J. Zhao; Y. Feng; D. Wang; T. Q. Zhang; W. Z. Gao; H. R. Chu; J. Z. Yin; Y. D. Wang; J. Zhao and W. W. Yu
	2015
发表期刊	Journal of Luminescence
卷号	162 页码:191-196
摘要	The enhanced photoluminescence (PL) for In-rich copper indium sulfide quantum dots (CIS QDs) was observed. The conduction electron-Cu vacancy recombination and the donor-acceptor pair (DAP) defect recombination were considered to exist in CIS QDs at the same time. The temperature-dependent PL study showed that the emission of these QDs might be mainly originated from the recombination between electrons in the quantized conduction band and holes in the copper vacancy acceptor when x was 0.500 (CuxIn1-xS). However, the temperature coefficient of PL peak position decreased when x was 0.237. That meant the DAP recombination increased in the In-rich CIS QDs. (C) 2015 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/55333
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liu, W. Y.,Y. Zhang,J. Zhao,et al. Photoluminescence of indium-rich copper indium sulfide quantum dots[J]. Journal of Luminescence,2015,162:191-196.
APA	Liu, W. Y..,Y. Zhang.,J. Zhao.,Y. Feng.,D. Wang.,...&J. Zhao and W. W. Yu.(2015).Photoluminescence of indium-rich copper indium sulfide quantum dots.Journal of Luminescence,162,191-196.
MLA	Liu, W. Y.,et al."Photoluminescence of indium-rich copper indium sulfide quantum dots".Journal of Luminescence 162(2015):191-196.

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