Highly Efficient and Low Turn-On Voltage Quantum Dot Light-Emitting Diodes by Using a Stepwise Hole-Transport Layer

	Highly Efficient and Low Turn-On Voltage Quantum Dot Light-Emitting Diodes by Using a Stepwise Hole-Transport Layer
	Ji, W. Y.; Y. Lv; P. T. Jing; H. Zhang; J. Wang; H. Z. Zhang and J. L. Zhao
	2015
发表期刊	Acs Applied Materials & Interfaces
卷号	7 期号:29 页码:15955-15960
摘要	Highly efficient red quantum dot light-emitting diodes (QD-LEDs) with a very high current efficiency of 16 cd/A were demonstrated by adopting stepwise hole-transport layers (HTLs) consisting of 4,4'-N,N'-dicarbazole-biphenyl (CBP) combined with N,N'-dicarbazolyl-3,5-benzene (mCP). The mCP layer plays two important roles in this kind of QD-LEDs. One is that it can block the electron to leak into the HTL due to its higher LUMO (LUMO = the lowest unoccupied molecular orbital) energy level than that of CBP; and the other is it can separate the carrier accumulation zone from the exciton formation interface, which is attributed to the stepwise hole-transport layer structure. Moreover, the lower HOMO (HOMO = the highest occupied molecular orbital) energy level of mCP decreases the hole-injection barrier from the HTL to the QD emitting layer, which improves the charge carrier balance injected into the QD layer, reducing the turn-on voltage of QD-LEDs fabricated with the stepwise HTL structure.
收录类别	SCI ; EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/55293
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Ji, W. Y.,Y. Lv,P. T. Jing,et al. Highly Efficient and Low Turn-On Voltage Quantum Dot Light-Emitting Diodes by Using a Stepwise Hole-Transport Layer[J]. Acs Applied Materials & Interfaces,2015,7(29):15955-15960.
APA	Ji, W. Y.,Y. Lv,P. T. Jing,H. Zhang,J. Wang,&H. Z. Zhang and J. L. Zhao.(2015).Highly Efficient and Low Turn-On Voltage Quantum Dot Light-Emitting Diodes by Using a Stepwise Hole-Transport Layer.Acs Applied Materials & Interfaces,7(29),15955-15960.
MLA	Ji, W. Y.,et al."Highly Efficient and Low Turn-On Voltage Quantum Dot Light-Emitting Diodes by Using a Stepwise Hole-Transport Layer".Acs Applied Materials & Interfaces 7.29(2015):15955-15960.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Ji-2015-Highly Effic（401KB）	期刊论文	作者接受稿	开放获取	CC BY-NC-SA	浏览下载