In-plane electroluminescence from microcavity organic light-emitting transistors

	In-plane electroluminescence from microcavity organic light-emitting transistors
	Hu, Y. S.; L. Song; D. W. Li; J. Lin and X. Y. Lui
	2015
发表期刊	Organic Electronics
卷号	26 页码:92-98
摘要	We report the observation of in-plane emission beneath the drain electrode in multilayer heterostructure organic light-emitting transistors (OLETs). A novel modification method for the interface between the hole transport layer and the emission layer has been proposed, which brought a great enhancement for the light power and external quantum efficiency. Further, distributed Bragg reflector was incorporated to the in-plane-emitted OLETs, which combined with the top thin layer of Au, forming a vertical microcavity. The electroluminescence spectra were significantly altered by the microcavity and much narrower linewidth was obtained. The results will help to develop high color purity and white OLETs with high performance, which would be useful for multifunctional displays. (C) 2015 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/55282
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Hu, Y. S.,L. Song,D. W. Li,et al. In-plane electroluminescence from microcavity organic light-emitting transistors[J]. Organic Electronics,2015,26:92-98.
APA	Hu, Y. S.,L. Song,D. W. Li,&J. Lin and X. Y. Lui.(2015).In-plane electroluminescence from microcavity organic light-emitting transistors.Organic Electronics,26,92-98.
MLA	Hu, Y. S.,et al."In-plane electroluminescence from microcavity organic light-emitting transistors".Organic Electronics 26(2015):92-98.

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