High spectral response of self-driven GaN-based detectors by controlling the contact barrier height

	High spectral response of self-driven GaN-based detectors by controlling the contact barrier height
	Sun, X. J.; D. B. Li; Z. M. Li; H. Song; H. Jiang; Y. R. Chen; G. Q. Miao and Z. W. Zhang
	2015
发表期刊	Scientific Reports
卷号	5 页码:7
摘要	High spectral response of self-driven GaN-based ultraviolet detectors with interdigitated finger geometries were realized using interdigitated Schottky and near-ohmic contacts. Ni/GaN/Cr, Ni/GaN/Ag, and Ni/GaN/Ti/Al detectors were designed with zero bias responsivities proportional to the Schottky barrier difference between the interdigitated contacts of 0.037 A/W, 0.083 A/W, and 0.104 A/W, respectively. Voltage-dependent photocurrent was studied, showing high gain under forward bias. Differences between the electron and hole mobility model and the hole trapping model were considered to be the main photocurrent gain mechanism. These detectors operate in photoconductive mode with large photocurrent gain and depletion mode with high speed, and can extend GaN-based metal-semiconductor-metal detector applications.
收录类别	SCI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/55272
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Sun, X. J.,D. B. Li,Z. M. Li,et al. High spectral response of self-driven GaN-based detectors by controlling the contact barrier height[J]. Scientific Reports,2015,5:7.
APA	Sun, X. J..,D. B. Li.,Z. M. Li.,H. Song.,H. Jiang.,...&G. Q. Miao and Z. W. Zhang.(2015).High spectral response of self-driven GaN-based detectors by controlling the contact barrier height.Scientific Reports,5,7.
MLA	Sun, X. J.,et al."High spectral response of self-driven GaN-based detectors by controlling the contact barrier height".Scientific Reports 5(2015):7.

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