High gain Ga2O3 solar-blind photodetectors realized via a carrier multiplication process

	High gain Ga2O3 solar-blind photodetectors realized via a carrier multiplication process
	Hu, G. C.; C. X. Shan; N. Zhang; M. M. Jiang; S. P. Wang and D. Z. Shen
	2015
发表期刊	Optics Express
卷号	23 期号:10 页码:13554-13561
摘要	Ga2O3 photodetectors with interdigitated electrodes have been designed and fabricated, and the Ga2O3 area exposed to illumination acts as the active layer of the photodetector, while the area covered by Au interdigital electrode provide an arena for carrier multiplication. The photodetectors show a maximum responsivity at around 255 nm and a cutoff wavelength of 260 nm, which lies in the solar-blind region. The responsivity of the photodetector reaches 17 A/W when the bias voltage is 20 V, which corresponds to a quantum efficiency of 8228%, amongst the best value ever reported in Ga2O3 film based solar-blind photodetectors. (C) 2015 Optical Society of America
收录类别	SCI ; EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/55271
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Hu, G. C.,C. X. Shan,N. Zhang,et al. High gain Ga2O3 solar-blind photodetectors realized via a carrier multiplication process[J]. Optics Express,2015,23(10):13554-13561.
APA	Hu, G. C.,C. X. Shan,N. Zhang,M. M. Jiang,&S. P. Wang and D. Z. Shen.(2015).High gain Ga2O3 solar-blind photodetectors realized via a carrier multiplication process.Optics Express,23(10),13554-13561.
MLA	Hu, G. C.,et al."High gain Ga2O3 solar-blind photodetectors realized via a carrier multiplication process".Optics Express 23.10(2015):13554-13561.

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