Growth orientation dependence of Si doping in GaAsN

	Growth orientation dependence of Si doping in GaAsN
	Han, X. X.; C. Dong; Q. Feng; Y. Ohshita and M. Yamaguchi
	2015
发表期刊	Journal of Applied Physics
卷号	117 期号:5 页码:4
摘要	The incorporation of Si in GaAsN alloys grown simultaneously on (100), (311)A, (311)B, and (211)B GaAs substrates by the chemical beam epitaxy has been investigated. The decrease in electron concentration with the increasing N composition suggests the occurrence of N and Si interaction, whereas the interaction exhibits evidently different extent depending on the growth orientation. Combined with the secondary ion mass spectrometry and photoluminescence measurements, it is revealed that (311)B and (211)B are the promising substrate orientations to reduce the N-Si passivation and improve n-type Si doping in GaAsN over a wider N composition range. A surface bonding model is utilized to explain the plane polarity dependent incorporation behaviors of Si and N. (C) 2015 AIP Publishing LLC.
收录类别	SCI ; EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/55264
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Han, X. X.,C. Dong,Q. Feng,et al. Growth orientation dependence of Si doping in GaAsN[J]. Journal of Applied Physics,2015,117(5):4.
APA	Han, X. X.,C. Dong,Q. Feng,&Y. Ohshita and M. Yamaguchi.(2015).Growth orientation dependence of Si doping in GaAsN.Journal of Applied Physics,117(5),4.
MLA	Han, X. X.,et al."Growth orientation dependence of Si doping in GaAsN".Journal of Applied Physics 117.5(2015):4.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Han-2015-Growth orie（711KB）	期刊论文	作者接受稿	开放获取	CC BY-NC-SA	浏览下载