Photoemission characteristics of thin GaAs-based heterojunction photocathodes

	Photoemission characteristics of thin GaAs-based heterojunction photocathodes
	Feng, C.; Y. J. Zhang; Y. S. Qian; F. Shi; J. J. Zou and Y. G. Zeng
	2015
发表期刊	Journal of Applied Physics
卷号	117 期号:2 页码:8
摘要	To better understand the different photoemission mechanism of thin heterojunction photocathodes, the quantum efficiency models of reflection-mode and transmission-mode GaAs-based heterojunction photocathodes are revised based on one-dimensional continuity equations, wherein photoelectrons generated from both the emission layer and buffer layer are taken into account. By comparison of simulated results between the revised and conventional models, it is found that the electron contribution from the buffer layer to shortwave quantum efficiency is closely related to some factors, such as the thicknesses of emission layer and buffer layer and the interface recombination velocity. Besides, the experimental quantum efficiency data of reflection-mode and transmission-mode AlGaAs/GaAs photocathodes are well fitted to the revised models, which confirm the applicability of the revised quantum efficiency models. (C) 2015 AIP Publishing LLC.
收录类别	SCI ; EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/55246
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Feng, C.,Y. J. Zhang,Y. S. Qian,et al. Photoemission characteristics of thin GaAs-based heterojunction photocathodes[J]. Journal of Applied Physics,2015,117(2):8.
APA	Feng, C.,Y. J. Zhang,Y. S. Qian,F. Shi,&J. J. Zou and Y. G. Zeng.(2015).Photoemission characteristics of thin GaAs-based heterojunction photocathodes.Journal of Applied Physics,117(2),8.
MLA	Feng, C.,et al."Photoemission characteristics of thin GaAs-based heterojunction photocathodes".Journal of Applied Physics 117.2(2015):8.

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