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Effect of Al Diffusion on Electrical and Photoluminescent Properties of MgxZn1-xO Alloy Films Fabricated on Sapphire Substrates
Gao, L. L.; Y. F. Li; B. Yao; R. Deng; L. G. Zhang; H. F. Zhao and L. Liu
2015
发表期刊Nanoscience and Nanotechnology Letters
卷号7期号:2页码:111-116
摘要Al diffusion from sapphire substrates to MgxZn1-xO alloy thin films fabricated at high temperature has been investigated by a secondary ion mass spectrometry. Al impurities were detected with high concentration of above 10(19) cm(-3) at the surface of MgxZn1-xO thin films. Electrical properties measurement indicates that the carrier concentration of MgxZn1-xO thin film significantly decreases with the increase of Mg content, from similar to 10(18) cm(-3) in ZnO to similar to 10(15) cm(-3) in Mg0.16Zn0.84O alloy. Temperature-dependent photoluminescence demonstrates that Al impurity has a deeper donor level in Mg0.16Zn0.84O than in ZnO. Furthermore, the first-principles calculations show that ionization energy of Al substituted cation site (Al-CA) in MgxZn1-xO alloy increases with the increase of Mg content, well supporting the experimental result. The increasing ionization energy of Al impurity with increasing Mg content is due to the CBM shift to high energy as increasing Mg content.
收录类别SCI
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/55224
专题中科院长春光机所知识产出
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Gao, L. L.,Y. F. Li,B. Yao,et al. Effect of Al Diffusion on Electrical and Photoluminescent Properties of MgxZn1-xO Alloy Films Fabricated on Sapphire Substrates[J]. Nanoscience and Nanotechnology Letters,2015,7(2):111-116.
APA Gao, L. L.,Y. F. Li,B. Yao,R. Deng,L. G. Zhang,&H. F. Zhao and L. Liu.(2015).Effect of Al Diffusion on Electrical and Photoluminescent Properties of MgxZn1-xO Alloy Films Fabricated on Sapphire Substrates.Nanoscience and Nanotechnology Letters,7(2),111-116.
MLA Gao, L. L.,et al."Effect of Al Diffusion on Electrical and Photoluminescent Properties of MgxZn1-xO Alloy Films Fabricated on Sapphire Substrates".Nanoscience and Nanotechnology Letters 7.2(2015):111-116.
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