Ultraviolet photodetector based on heterojunction of n-ZnO microwire/p-GaN film

	Ultraviolet photodetector based on heterojunction of n-ZnO microwire/p-GaN film
	Ding, M.; D. X. Zhao; B. Yao; Z. P. Li and X. J. Xu
	2015
发表期刊	Rsc Advances
卷号	5 期号:2 页码:908-912
摘要	High quality ZnO microwires have been fabricated by chemical vapor deposition method. Ultraviolet photodetector based on heterojunction of n-ZnO (individual microwire)/p-GaN film was fabricated. The current-voltage characteristic of the photodetector was investigated, which showed that the heterojunction had rectifying behavior with rectification ratio (I-forward/I-reverse) of about 6.3 x 10(2) at 4 V. The photoresponse spectrum displayed a sharp cut-off at the wavelength of 380 nm, and the photoresponsivity was as high as 0.45 A W-1 at 0 V and 1.3 A W-1 at 2.5 V reverse bias. The ultraviolet-visible rejection ratio (R370 nm/R450 nm) is three orders of magnitude under zero bias.
收录类别	SCI ; EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/55222
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Ding, M.,D. X. Zhao,B. Yao,et al. Ultraviolet photodetector based on heterojunction of n-ZnO microwire/p-GaN film[J]. Rsc Advances,2015,5(2):908-912.
APA	Ding, M.,D. X. Zhao,B. Yao,&Z. P. Li and X. J. Xu.(2015).Ultraviolet photodetector based on heterojunction of n-ZnO microwire/p-GaN film.Rsc Advances,5(2),908-912.
MLA	Ding, M.,et al."Ultraviolet photodetector based on heterojunction of n-ZnO microwire/p-GaN film".Rsc Advances 5.2(2015):908-912.

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