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Wavelength-Tuned Light Emission via Modifying the Band Edge Symmetry: Doped SnO2 as an Example
Zhou H.; Deng R.; Li Y. F.; Yao B.; Ding Z. H.; Wang Q. X.; Han Y.; Wu T.; Liu L.
2014
发表期刊Journal of Physical Chemistry C
ISSNISBN/1932-7447
卷号118期号:12页码:6365-6371
摘要We report the observation of ultraviolet photoluminescence and electroluminescence in indium-doped SnO2 thin films with modified "forbidden" bandgap. With increasing indium concentration in SnO2, dominant visible light emission evolves into the ultraviolet regime in photoluminescence. Hybrid functional first-principles calculations demonstrate that the complex of indium dopant and oxygen vacancy breaks "forbidden" band gap to form allowed transition states. Furthermore, undoped and 10% indium-doped SnO2 layers are synthesized on p-type GaN substrates to obtain SnO2-based heterojunction light-emitting diodes. A dominant visible emission band is observed in the undoped SnO2-based heterojunction, whereas strong near-ultraviolet emission peak at 398 nm is observed in the indium-doped SnO2-based heterojunction. Our results demonstrate an unprecedented doping-based approach toward tailoring the symmetry of band edge states and recovering ultraviolet light emission in wide-bandgap oxides.
收录类别SCI ; EI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/44508
专题中科院长春光机所知识产出
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Zhou H.,Deng R.,Li Y. F.,et al. Wavelength-Tuned Light Emission via Modifying the Band Edge Symmetry: Doped SnO2 as an Example[J]. Journal of Physical Chemistry C,2014,118(12):6365-6371.
APA Zhou H..,Deng R..,Li Y. F..,Yao B..,Ding Z. H..,...&Liu L..(2014).Wavelength-Tuned Light Emission via Modifying the Band Edge Symmetry: Doped SnO2 as an Example.Journal of Physical Chemistry C,118(12),6365-6371.
MLA Zhou H.,et al."Wavelength-Tuned Light Emission via Modifying the Band Edge Symmetry: Doped SnO2 as an Example".Journal of Physical Chemistry C 118.12(2014):6365-6371.
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