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The work mechanism and sub-bandgap-voltage electroluminescence in inverted quantum dot light-emitting diodes
Ji W. Y.; Jing P. T.; Zhang L. G.; Li D.; Zeng Q. H.; Qu S. N.; Zhao J. L.
2014
发表期刊Scientific Reports
ISSNISBN/2045-2322
卷号4期号:6
摘要Through introducing a probe layer of bis(4,6-difluorophenylpyridinato-N, C2) picolinatoiridium (FIrpic) between QD emission layer and 4, 4-N, N-dicarbazole-biphenyl (CBP) hole transport layer, we successfully demonstrate that the electroluminescence (EL) mechanism of the inverted quantum dot light-emitting diodes (QD-LEDs) with a ZnO nanoparticle electron injection/transport layer should be direct charge-injection from charge transport layers into the QDs. Further, the EL from QD-LEDs at sub-bandgap drive voltages is achieved, which is in contrast to the general device in which the turn-on voltage is generally equal to or greater than its bandgap voltage (the bandgap energy divided by the electron charge). This sub-bandgap EL is attributed to the Auger-assisted energy up-conversion hole-injection process at the QDs/organic interface. The high energy holes induced by Auger-assisted processes can be injected into the QDs at sub-bandgap applied voltages. These results are of important significance to deeply understand the EL mechanism in QD-LEDs and to further improve device performance.
收录类别SCI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/44457
专题中科院长春光机所知识产出
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Ji W. Y.,Jing P. T.,Zhang L. G.,et al. The work mechanism and sub-bandgap-voltage electroluminescence in inverted quantum dot light-emitting diodes[J]. Scientific Reports,2014,4(6).
APA Ji W. Y..,Jing P. T..,Zhang L. G..,Li D..,Zeng Q. H..,...&Zhao J. L..(2014).The work mechanism and sub-bandgap-voltage electroluminescence in inverted quantum dot light-emitting diodes.Scientific Reports,4(6).
MLA Ji W. Y.,et al."The work mechanism and sub-bandgap-voltage electroluminescence in inverted quantum dot light-emitting diodes".Scientific Reports 4.6(2014).
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