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Studies on synthesis of boron-doped Gem-diamond single crystals under high temperature and high presure
Xiao H. Y.; Li S. S.; Qin Y. K.; Liang Z. Z.; Zhang Y. S.; Zhang D. M.
2014
发表期刊Acta Physica Sinica
ISSNISBN/1000-3290
卷号63期号:19页码:7
摘要In this paper, by choosing catalyst of FeNiMnCo alloy, boron-doped diamond single crystals are synthesized under 5.1-5.6 GPa and 1230-1600 degrees C; the temperature field is studied by finite element method (FEM). First, the P-T phase diagram for diamond single crystal growth, in the synthesis system of FeNiMnCo-C-B, is obtained, and the lowest synthesis conditions of 5.1 GPa and 1230 degrees C is found in the studies. By simulation with FEM, it is found that the content of boron element should be less and less in the growth of diamond single crystal in the {111} sector, and the reason is that the growth speed is reduced in the sectors. By growing diamond crystals with {111} faces, it is also found that the content of boron element in {111} secondary sector is greater than that in {111} primary sector, which is duo to the rapid growth of {111} secondary sector. Compared with the synthesis of diamond single crystal by film growth method, the diamond crystals thus obtained has no pits, the doping content of boron can be greater, and the diamond can be synthesized by temperature gradient method.
收录类别SCI ; EI
语种中文
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/44397
专题中科院长春光机所知识产出
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GB/T 7714
Xiao H. Y.,Li S. S.,Qin Y. K.,et al. Studies on synthesis of boron-doped Gem-diamond single crystals under high temperature and high presure[J]. Acta Physica Sinica,2014,63(19):7.
APA Xiao H. Y.,Li S. S.,Qin Y. K.,Liang Z. Z.,Zhang Y. S.,&Zhang D. M..(2014).Studies on synthesis of boron-doped Gem-diamond single crystals under high temperature and high presure.Acta Physica Sinica,63(19),7.
MLA Xiao H. Y.,et al."Studies on synthesis of boron-doped Gem-diamond single crystals under high temperature and high presure".Acta Physica Sinica 63.19(2014):7.
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