Pure ultraviolet emission from ZnO nanowire-based p-n heterostructures

	Pure ultraviolet emission from ZnO nanowire-based p-n heterostructures
	Liu X. Y.; Shan C. X.; Jiao C.; Wang S. P.; Zhao H. F.; Shen D. Z.
	2014
发表期刊	Optics Letters
ISSN	ISBN/0146-9592
卷号	39 期号:3 页码:422-425
摘要	Well-aligned ZnO nanowires have been prepared on sapphire substrate, and structural and optical characterizations indicate that the nanowires are of single crystalline and have relatively high luminescent quality. By employing the ZnO nanowires as an active layer, p-Zn0.68Mg0.32O:N/n-ZnO nanowire heterostructure light-emitting devices (LEDs) have been fabricated. The LEDs show pure ultraviolet emission when a forward bias is applied, while the deep-level emission frequently observed in ZnO p-n junctions is almost totally invisible. The devices can work continuously for over 27 h under the injection of a current density of 500 mA/cm(2), indicating their good stability. (C) 2014 Optical Society of America
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/44298
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liu X. Y.,Shan C. X.,Jiao C.,et al. Pure ultraviolet emission from ZnO nanowire-based p-n heterostructures[J]. Optics Letters,2014,39(3):422-425.
APA	Liu X. Y.,Shan C. X.,Jiao C.,Wang S. P.,Zhao H. F.,&Shen D. Z..(2014).Pure ultraviolet emission from ZnO nanowire-based p-n heterostructures.Optics Letters,39(3),422-425.
MLA	Liu X. Y.,et al."Pure ultraviolet emission from ZnO nanowire-based p-n heterostructures".Optics Letters 39.3(2014):422-425.

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