p-type doping of ZnO:N thin fims by alternating the growth atmosphere

	p-type doping of ZnO:N thin fims by alternating the growth atmosphere
	Zhao P.-C.; Zhang Z.-Z.; Yao B.; Li B.-H.; Wang S.-P.; Jiang M.-M.; Zhao D.-X.; Shan C.-X.; Liu L.; Shen D.-Z.
	2014
发表期刊	Faguang Xuebao/中文 Journal of Luminescence
ISSN	ISBN/10007032
卷号	35 期号:4 页码:399-403
摘要	A series of nitrogen-doped zinc oxide (ZnO:N) thin films were grown on c-plane sapphire substrate by plasma-assisted molecular beam epitaxy. Due to the large number of donor defects, the samples grown in the continuous zinc-rich atmosphere showed n-type conductivity. In order to suppress the compensation effect caused by donor defects, by periodically supplying oxygen during the growth and then alternating the growth atmosphere in the growth process, the conflict between nitrogen doping level and intrinsic defects was relaxed partly. Compared to the case without supplying oxygen, the crystal quality of the thin films was improved. And the photoluminescence measurements showed that the oxygen vacancy and the zinc interstitial defects in the thin films were suppressed significantly. The samples showed a high repeatability of p-type conductivity. The carrier concentration of the samples grown by alternating the growth atmosphere can reach 1016 cm-3. This may be an effective method to realize the p-type doped ZnO.
收录类别	EI
语种	中文
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/44296
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhao P.-C.,Zhang Z.-Z.,Yao B.,et al. p-type doping of ZnO:N thin fims by alternating the growth atmosphere[J]. Faguang Xuebao/中文 Journal of Luminescence,2014,35(4):399-403.
APA	Zhao P.-C..,Zhang Z.-Z..,Yao B..,Li B.-H..,Wang S.-P..,...&Shen D.-Z..(2014).p-type doping of ZnO:N thin fims by alternating the growth atmosphere.Faguang Xuebao/中文 Journal of Luminescence,35(4),399-403.
MLA	Zhao P.-C.,et al."p-type doping of ZnO:N thin fims by alternating the growth atmosphere".Faguang Xuebao/中文 Journal of Luminescence 35.4(2014):399-403.