Polishing silicon modification layer on silicon carbide surface by ion beam figuring

	Polishing silicon modification layer on silicon carbide surface by ion beam figuring
	Deng W.
	2014
发表期刊	中文 Optics Letters
ISSN	ISBN/16717694
卷号	12
摘要	Silicon (Si) modification layer on silicon carbide (SiC) surface is widely used in space optical systems. To achieve high-quality optical surface, the technology of ion beam figuring (IBF) is studied. The radio frequency ion beam source is introduced briefly. Then the removal function experiment is studied. The volume removal stability of the IBF reached 97% in 10 h continuous working testing. The parameters of the IBF removal function are calculated by Gaussian fitting including the removal rate and the full-width half-maximum. Then the removal function results are used in practical fabrication. The workpiece is a plane with Si modification layer on SiC surface. After 148 min processing IBF, the final surface error reaches 1.2 nm RMS.
收录类别	EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/44277
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Deng W.. Polishing silicon modification layer on silicon carbide surface by ion beam figuring[J]. 中文 Optics Letters,2014,12.
APA	Deng W..(2014).Polishing silicon modification layer on silicon carbide surface by ion beam figuring.中文 Optics Letters,12.
MLA	Deng W.."Polishing silicon modification layer on silicon carbide surface by ion beam figuring".中文 Optics Letters 12(2014).

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