Limiting pump intensity for sulfur-doped gallium selenide crystals

	Limiting pump intensity for sulfur-doped gallium selenide crystals
	Guo J.; Li D. J.; Xie J. J.; Zhang L. M.; Feng Z. S.; Andreev Y. M.; Kokh K. A.; Lanskii G. V.; Potekaev A. I.; Shaiduko A. V.; Svetlichnyi V. A.
	2014
发表期刊	Laser Physics Letters
ISSN	ISBN/1612-2011
卷号	11 期号:5 页码:6
摘要	High optical quality undoped and sulfur-doped gallium selenide crystals were grown from melts by the modified vertical Bridgman method. Detailed study of the damage produced under femtosecond pulse exposure has shown that evaluation of the damage threshold by visual control is unfounded. Black matter spots produced on crystal surfaces do not noticeably decrease either its transparency or its frequency conversion efficiency as opposed to real damage identified as caked well-cohesive gallium structures. For the first time it was demonstrated that optimally sulfur-doped gallium selenide crystal possesses the highest resistivity to optical emission ( about four times higher in comparison with undoped gallium selenide).
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/44128
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Guo J.,Li D. J.,Xie J. J.,et al. Limiting pump intensity for sulfur-doped gallium selenide crystals[J]. Laser Physics Letters,2014,11(5):6.
APA	Guo J..,Li D. J..,Xie J. J..,Zhang L. M..,Feng Z. S..,...&Svetlichnyi V. A..(2014).Limiting pump intensity for sulfur-doped gallium selenide crystals.Laser Physics Letters,11(5),6.
MLA	Guo J.,et al."Limiting pump intensity for sulfur-doped gallium selenide crystals".Laser Physics Letters 11.5(2014):6.

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