Improvements of organic field-effect transistors by introducing an EuF3 ultra-thin film as modified layer electrode

	Improvements of organic field-effect transistors by introducing an EuF3 ultra-thin film as modified layer electrode
	Li H.; Gan Z.-H.; Liu X.-Y.
	2014
发表期刊	Faguang Xuebao/中文 Journal of Luminescence
ISSN	ISBN/10007032
卷号	35 期号:2 页码:238-242
摘要	Europium fluoride (EuF3) was employed to modify the source and drain electrodes in CuPc based OFETs, in which they were fabricated by low work function metal Ag. The Influence of EuF3 with different thickness on devices was investigated. The contact resistance reduced from 23.65105 cm to 3.86105 cm as the thickness of EuF3 increased from 0 nm to 0.6 nm, which lead to an increased field-effect mobility from 1.510-3 cm2V-1s-1 to 4.6510-3 cm2V-1s-1. The UPS results show that an interfacial dipole potential is formed between the silver electrodes and the organic semiconductor layer. It raises the surface work function of the source and drain electrodes and reduces the hole injection barrier, thus decreases the contact resistance and improves the hole injection efficiency.
收录类别	EI
语种	中文
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/44070
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li H.,Gan Z.-H.,Liu X.-Y.. Improvements of organic field-effect transistors by introducing an EuF3 ultra-thin film as modified layer electrode[J]. Faguang Xuebao/中文 Journal of Luminescence,2014,35(2):238-242.
APA	Li H.,Gan Z.-H.,&Liu X.-Y..(2014).Improvements of organic field-effect transistors by introducing an EuF3 ultra-thin film as modified layer electrode.Faguang Xuebao/中文 Journal of Luminescence,35(2),238-242.
MLA	Li H.,et al."Improvements of organic field-effect transistors by introducing an EuF3 ultra-thin film as modified layer electrode".Faguang Xuebao/中文 Journal of Luminescence 35.2(2014):238-242.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
超薄EuF_3电极修饰层对有机场效应晶体（740KB）			开放获取	CC BY-ND	浏览下载