Efficient Quantum Dot Light-Emitting Diodes by Controlling the Carrier Accumulation and Exciton Formation

	Efficient Quantum Dot Light-Emitting Diodes by Controlling the Carrier Accumulation and Exciton Formation
	Ji W. Y.; Tian Y.; Zeng Q. H.; Qu S. N.; Zhang L. G.; Jing P. T.; Wang J.; Zhao J. L.
	2014
发表期刊	Acs Applied Materials & Interfaces
ISSN	ISBN/1944-8244
卷号	6 期号:16 页码:14001-14007
摘要	The performances and spectroscopic properties of CdSe/ZnS quantum dot light-emitting diodes (QD-LEDs) with inserting a thickness-varied 1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBi) layer between the QD emission layer and 4,4-N,N-dicarbazole-biphenyl (CBP) hole transport layer (HTL) are studied. The significant enhancement in device peak efficiency is demonstrated for the device with a 3.5 nm TPBi interlayer. The photoluminescence lifetimes of excitons formed within QDs in different devices are also measured to understand the influence of electric field on the QD emission dynamics process and device efficiency. All the excitons on QDs at different devices have nearly the same lifetime even though at different bias. The improvement of device performance is attributed to the separation of charge carrier accumulation interface from the exciton formation zone, which suppresses exciton quenching caused by accumulated carriers.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/43950
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Ji W. Y.,Tian Y.,Zeng Q. H.,et al. Efficient Quantum Dot Light-Emitting Diodes by Controlling the Carrier Accumulation and Exciton Formation[J]. Acs Applied Materials & Interfaces,2014,6(16):14001-14007.
APA	Ji W. Y..,Tian Y..,Zeng Q. H..,Qu S. N..,Zhang L. G..,...&Zhao J. L..(2014).Efficient Quantum Dot Light-Emitting Diodes by Controlling the Carrier Accumulation and Exciton Formation.Acs Applied Materials & Interfaces,6(16),14001-14007.
MLA	Ji W. Y.,et al."Efficient Quantum Dot Light-Emitting Diodes by Controlling the Carrier Accumulation and Exciton Formation".Acs Applied Materials & Interfaces 6.16(2014):14001-14007.

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