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Effect of boron on nitrogen doped p-type ZnO thin films
Zhao P.-C.; Zhang Z.-Z.; Yao B.; Li B.-H.; Wang S.-P.; Jiang M.-M.; Zhao D.-X.; Shan C.-X.; Liu L.; Shen D.-Z.
2014
发表期刊Faguang Xuebao/中文 Journal of Luminescence
ISSNISBN/10007032
卷号35期号:7页码:795-799
摘要A stable and repeatable p-type ZnO is the key to realize the practical applications of photoelectric devices. Nitrogen has been considered as a possible acceptor dopant for p-type ZnO for a long time. However, the low solubility of nitrogen acceptor at oxygen site in ZnO is considered to be one of the main obstacles for p-type ZnO. In this paper, B/N co-doped p-type ZnO thin films were grown on sapphire substrate by plasma-assisted molecular beam epitaxy. The effect of boron on the nitrogen doping was studied by comparing with the single nitrogen doped thin films. X-ray photoelectron spectroscopy demonstrated there exists boron and B-N bond in the ZnO thin film. Compared to the single N-doped sample, B/N codoped samples present much higher carrier density. And the ZnO:(B, N) thin films show stable p-type conduction in two years. It is attributed to the increase of solubility of nitrogen acceptor. It benefits from the strong B-N bonding and weak donor character of boron at zinc site. Boron will not bring strong compensation for acceptors. It suggests that boron is a good co-doping candidate for nitrogen doped ZnO thin films.
收录类别EI
语种中文
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/43919
专题中科院长春光机所知识产出
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Zhao P.-C.,Zhang Z.-Z.,Yao B.,et al. Effect of boron on nitrogen doped p-type ZnO thin films[J]. Faguang Xuebao/中文 Journal of Luminescence,2014,35(7):795-799.
APA Zhao P.-C..,Zhang Z.-Z..,Yao B..,Li B.-H..,Wang S.-P..,...&Shen D.-Z..(2014).Effect of boron on nitrogen doped p-type ZnO thin films.Faguang Xuebao/中文 Journal of Luminescence,35(7),795-799.
MLA Zhao P.-C.,et al."Effect of boron on nitrogen doped p-type ZnO thin films".Faguang Xuebao/中文 Journal of Luminescence 35.7(2014):795-799.
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