Characterization of optical quality of GaSe:Al crystals by exciton absorption peak parameters

	Characterization of optical quality of GaSe:Al crystals by exciton absorption peak parameters
	Guo J.; Xie J. J.; Zhang L. M.; Kokh K.; Andreev Y.; Izaak T.; Lanskii G.; Shaiduko A.; Svetlichnyi V.
	2014
发表期刊	Journal of Materials Science-Materials in Electronics
ISSN	ISBN/0957-4522
卷号	25 期号:4 页码:1757-1760
摘要	The paper reports a first growth of the Al-doped GaSe crystals by modified technology with heat field rotation. These crystals shown from 2 to 3 times lower absorption coefficient at the maximal transparency range to that in crystals grown by conventional Bridgman technology. Possibility of the identification of optimal doping level in grown crystals by analysis of shape of the exciton absorption peak and intensity of the absorption shoulder at the transmission edge was demonstrated. The optimal doping can be attributed to the concentration of Al in the growth charge between 0.02 and 0.05 at.%. The result of the identification is confirmed by frequency conversion experiments: CO2 laser SHG and optical rectification of fs pulses.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/43785
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Guo J.,Xie J. J.,Zhang L. M.,et al. Characterization of optical quality of GaSe:Al crystals by exciton absorption peak parameters[J]. Journal of Materials Science-Materials in Electronics,2014,25(4):1757-1760.
APA	Guo J..,Xie J. J..,Zhang L. M..,Kokh K..,Andreev Y..,...&Svetlichnyi V..(2014).Characterization of optical quality of GaSe:Al crystals by exciton absorption peak parameters.Journal of Materials Science-Materials in Electronics,25(4),1757-1760.
MLA	Guo J.,et al."Characterization of optical quality of GaSe:Al crystals by exciton absorption peak parameters".Journal of Materials Science-Materials in Electronics 25.4(2014):1757-1760.

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