基于立方相MgZnO薄膜的高响应度深紫外探测器

	基于立方相MgZnO薄膜的高响应度深紫外探测器
	郑剑; 乔倩; 张振中; 王立昆; 韩舜; 张吉英; 刘益春; 王双鹏; 陈星; 姜明明; 李炳辉; 赵东旭; 刘雷; 刘可为; 单崇新; 申德振
	2014-11-15
Source Publication	发光学报
Issue	11 Pages:1291-1296
Abstract	在超过相变临界厚度的立方相Mg0.29Zn0.71O薄膜上制备了Au插指电极MSM结构探测器件,30 V偏压下的峰值响应度可达27.9 A/W(268 nm),对应的外量子效率为12900%。分析认为原位生长在立方相MgZnO薄膜上的极薄的结构相变层引入了高密度的界面态,在立方相薄膜表面电极接触中起到了降低势垒、减小耗尽层宽度、增强电极注入电子的能力的作用,使得器件形成高的光导增益。
Keyword	立方mgzno 深紫外探测器光导增益
Language	中文
Document Type	期刊论文
Identifier	http://ir.ciomp.ac.cn/handle/181722/43446
Collection	中科院长春光机所知识产出
Recommended Citation GB/T 7714	郑剑,乔倩,张振中,等. 基于立方相MgZnO薄膜的高响应度深紫外探测器[J]. 发光学报,2014(11):1291-1296.
APA	郑剑.,乔倩.,张振中.,王立昆.,韩舜.,...&申德振.(2014).基于立方相MgZnO薄膜的高响应度深紫外探测器.发光学报(11),1291-1296.
MLA	郑剑,et al."基于立方相MgZnO薄膜的高响应度深紫外探测器".发光学报 .11(2014):1291-1296.

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