ArF准分子激光高反射薄膜技术研究

	ArF准分子激光高反射薄膜技术研究
	常艳贺
学位类型	博士
导师	金春水
	2014-07
学位授予单位	中国科学院大学
学位专业	光学
摘要	集成电路制造业是我国给予高度关注的战略产业之一。随着光刻技术的不断发展，集成电路的集成度越来越高，集成电路的尺寸越来越小，自20世纪末以来，ArF准分子193nm激光投影光刻机已成为90nm和65nm节点极大规模集成电路制造的主流装备，因此，在ArF准分子激光器及其相应光学系统中所应用的193nm光学薄膜元件具有重要作用。本文对深紫外193nm激光光学系统所使用的高反射薄膜光学元件进行了研究与制备，对光学薄膜元件提出了低损耗和高损伤阈值等技术要求，具体研究内容包括以下几个方面：1．为了制备出满足上述性能要求的光学薄膜元件，首先必须准确确定出所用薄膜材料在相应波段范围内的光学常数(折射率和消光系数)。材料的光学常数在薄膜状态下和块状状态下差别很大，并依赖所采用的沉积方法。在各个具体的制备条件下，精确解析薄膜的光学常数是制备出高性能薄膜光学元件的重要一环。根据热蒸发制备的LaF3薄膜生长特性，采用了一种折射率非均匀性薄膜光学常数的表征方法，该方法是基于非均匀模型和光度法同时拟合确定薄膜的光学常数，并且与椭圆偏振法相互验证，提高了薄膜在深紫外波段光学常数的解析精度。2．薄膜的光学性能依赖于沉积方法和沉积条件，需要对不同沉积条件和工艺参数下制备的薄膜进行分析。对热蒸发制备的LaF3、MgF2、GdF3和AlF3薄膜在不同沉积温度和沉积速率的条件下进行光学性能和结构的详细研究，并对薄膜的光学性能、微观结构、化学组分和激光量热吸收等进行系统表征，从而确定各种工艺参数下的薄膜特性。3．基于高反射薄膜体内电场强度的分布特点，优化设计了多层高反射薄膜，根据设计的结果以及优化的沉积工艺，制备了193nm波段高反射薄膜，并进行薄膜损耗和误差反演分析，找出理论设计和实际制备之间的误差原因，从而完善高反射薄膜的沉积工艺。4．对制备的深紫外193nm多层高反射薄膜进行ArF准分子激光损伤测试，综合分析薄膜的损伤形貌，系统研究薄膜特性及其演变与薄膜损伤之间的相关性，从理论和实验两方面出发，推断出ArF准分子激光对高反射薄膜的损伤机理，并在采用优化薄膜的表面缺陷、聚集密度和膜系设计的基础上，在1-on-1损伤模式下，将薄膜激光损伤阈值从1.74J/cm2提高到了2.25J/cm2。
其他摘要	Integrated circuit(IC) manufacturing is one of the strategic industries to which is given great attention in our country. With the continuous development of lithography technology, the density of integrated circuit has become higher, and the size has become smaller. Since the end of the 20th century, ArF excimer laser projection lithography has become the mainstream equipment of 90nm and 65nm node huge scale integrated circuit manufacturing. Therefore, 193nm optical thin film devices which applied in ArF excimer laser and its corresponding optical system have played an important role. In this paper, the research and preparation have been carried on the high refection coatings which is used by 193nm laser optical system, the technical requirements of low loss and high damage threshold for optical thin film components have been proposed. The main contents are as follows:1. In order to prepare the optical thin film components which meet the performance requirements, you must accurately identify the optical constants (refractive index and extinction coefficient) of the thin film materials used in the corresponding wavelength range. The optical constants of the materials in the thin-film state and the block state vary greatly, and depend on the deposition methods. Under various specific preparation conditions, accurate analysis of thin film optical constants is one of the most important aspects of the preparation of high performance film optical elements. According to LaF3 film growth characteristics prepared by thermal evaporation, this paper proposes a characterization of the refractive index inhomogeneity of film optical constants, which is based on inhomogeneous model and spectrophotometry method to determine the optical constants of thin films at the same time, and to do the mutual authentication with the method of ellipsometry, and to improve the optical constants of analytic precision when the film is in the deep ultraviolet wavelength range.2. The optical properties of thin film depend on the deposition methods and conditions, and the analysis on the thin film which prepared under different deposition conditions and process parameters are needed. Detailed study on the optical properties and structure of LaF3, MgF2, GdF3 and AlF3 film that prepared by thermal evaporation under different deposition temperature and deposition rate, and systematical characterization on optical properties, microstructure, chemical composition and laser calorimetry of thin film. So as to determine the film properties under various process parameters.3. Based on the distribution characteristics of electric field intensity in the body of high reflection film, the coatings has been optimized designed. According to the result of design and optimization of deposition process, the 193nm high reflective film has been prepared, the film loss and the error of inversion have been analyzed, and identify the reasons of the error between the theoretical design and practical preparation, so as to improve the high reflection film deposition process.4. For the preparation 193nm coatings, ArF excimer laser damage test has been done, comprehensively analyze the thin film’s damage morphology, systematically research the correlation between the film properties and its evolution and the membrane damage. Starting from the two aspects of theory and experiment, deduce the ArF excimer laser damage mechanism of high reflective film, increase the film laser damage threshold from 1.74J/cm2 to 2.25J/cm2 on the basis of optimizing use of surface defects, packing density and coating design under 1-on-1 damage mode.
语种	中文
文献类型	学位论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/41393
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	常艳贺. ArF准分子激光高反射薄膜技术研究[D]. 中国科学院大学,2014.

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